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PDF STU1955NL Data sheet ( Hoja de datos )
| Número de pieza | STU1955NL | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STU1955NL (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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t4U.com S T U /D 1955N LSamHop Microelectronics Corp.
Arp,12 2005 ver1.2
heeN-C hannel E n ancement Mode Field E ffect Transistor
ataSPR ODUCT S UMMAR Y
w.DV DS S
ID
R DS (ON) ( m W ) Max
ww .com55V 10A
55 @ VGS = 10V
80 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO-252 and TO-251 P ackage.
UD
t4G
S
S TU S E R IE S
eT O -252AA(D-P AK )
GDS
S TD S E R IE S
TO-251(l-P AK)
D
G
S
heAB S OLUTE MAXIMUM R ATINGS (TA=25 C unles s otherwis e noted)
SP a ra meter
taDrain-S ource Voltage R ating
Drain-S ource Voltage
aGate-S ource Voltage
.DDrain Current-Continuous a @ Ta
25 C
70 C
ww om-Pulsed b
.cDrain-S ource Diode Forward C urrent a
w et4UMaximum Power Dissipation a
SheOperating Junction and S torage
taTemperature R ange
Ta= 25 C
Ta=70 C
S ymbol
Vspike (d)
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
60
55
20
10
8
23
15
50
35
-55 to 175
Unit
V
V
V
A
A
A
A
W
C
.DaTHE R MAL CHAR ACTE R IS TICS
wwwThermal R esistance, Junction-to-Case
R JC
3 C/W
Thermal R esistance, Junction-to-Ambient
R JA
50
C /W
1 page  
S T U/D1955NL
V DD
V IN R L
D VOUT
VG S
RGEN G
S
F igure 11. S witching T es t C ircuit
10
td(on)
VOUT
ton
tr
td(off)
90%
10% INVE R TE D
toff
tf
90%
10%
VIN
10%
90%
50% 50%
PULS E WIDTH
F igure 12. S witching Waveforms
6
1 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
0.00001
Single Pulse
P DM
t1
t2
on 1. R thJA (t)=r (t) * R thJA
2. R thJA=S ee Datas heet
3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
10
100
1000
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STU1955NL.PDF ] | |
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