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VP2206 데이터시트 PDF




Supertex에서 제조한 전자 부품 VP2206은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 VP2206 자료 제공

부품번호 VP2206 기능
기능 P-Channel Enhancement Mode Vertical DMOS FETs
제조업체 Supertex
로고 Supertex 로고


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VP2206 데이터시트, 핀배열, 회로
Supertex inc.
VP2206
P-Channel Enhancement-Mode
Vertical DMOS FET
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
High input impedance and high gain
Excellent thermal stability
Integral source-to-drain diode
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
General Description
The Supertex VP2206 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors, and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free from
thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low
input capacitance, and fast switching speeds are desired.
Ordering Information
Device
Package Options
TO-39
TO-92
NW
(Die in wafer form)
Wafer / Die Options
NJ
(Die on adhesive tape)
VP2206
VP2206N2
VP2206N3-G
VP5206NW
VP5206NJ
For packaged products, -G indicates package is RoHS compliant (‘Green’). TO-39 package is RoHS compliant (‘Green’).
Devices in Wafer / Die form are RoHS compliant (‘Green’).
Refer to Die Specification VF52 for layout and dimensions.
ND
(Die in waffle pack)
VP5206ND
Product Summary
Pin Configurations
Device
VP2206N2
VP2206N3-G
BVDSS/BVDGS
(V)
-60
RDS(ON)
(max)
(Ω)
0.9
Absolute Maximum Ratings
Parameter
ID(ON)
(min)
(A)
-4.0
Value
GATE
SOURCE
DRAIN
TO-39 (N2)
Product Marking
SOURCE
DRAIN
GATE
TO-92 (N3)
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BVDSS
BVDGS
±20V
Operating and storage temperature -55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
VP
2206N2
YYWW
YY = Year Sealed
WW = Week Sealed
Package may or may not include the following marks: Si or
TO-39 (N2)
SiVP YY = Year Sealed
2 2 0 6 WW = Week Sealed
YYWW
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92 (N3)
Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com




VP2206 pdf, 반도체, 판매, 대치품
Typical Performance Curves (cont.)
BVDSS Variation with Temperature
1.1
1.0
0.9
-50
0 50 100
Tj (OC)
150
Transfer Characteristics
-10
VDS = -25V
-8.0
-6.0
TA = -55OC
25OC
-4.0
125OC
-2.0
0
0 -2.0 -4.0 -6.0 -8.0 -10
VGS (volts)
Capacitance vs. Drain-to-Source Voltage
400
f = 1.0MHz
CISS
300
200
100
00
COSS
CRSS
-10 -20 -30
VDS (volts)
-40
VP2206
On-Resistance vs. Drain Current
5.0
VGS = -5.0V
4.0
3.0
2.0
VGS = -10V
1.0
0
0 -2.0 -4.0 -6.0 -8.0 -10
ID (amperes)
V(th) and RDS Variation with Temperature
1.2 2.0
RDS(ON) @ -10V, -3.5A
1.1 1.6
1.0 1.2
0.9 0.8
V(th) @ -1.0mA
0.8 0.4
0.7
-50
0 50 100
Tj (OC)
0
150
Gate Drive Dynamic Characteristics
-10
-8.0
VDS = -10V
VDS = -40V
-6.0
725 pF
-4.0
-2.0
310 pF
00 2.0 4.0 6.0 8.0
QG (nanocoulombs)
10
Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
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