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PDF CS223-2N Data sheet ( Hoja de datos )
| Número de pieza | CS223-2N | |
| Descripción | (CS223-2M/N) SILICON CONTROLLED RECTIFIER | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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om CentralCS223-2M
.cCS223-2N
t4U2.0 AMP SCR
ataShee600 THRU 800 VOLTS
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CS223-2M
series type is an Epoxy Molded Silicon Controlled
Rectifier designed for sensing circuit applications
and control systems.
MARKING CODE: FULL PART NUMBER
ww.D SOT-223 CASE
w MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
omPeak Repetitive Off-State Voltage
.cRMS On-State Current (TC=60°C)
Peak One Cycle Surge (t=10ms)
I2t Value for Fusing (t=10ms)
UPeak Gate Power (tp=10µs)
t4Average Gate Power Dissipation
Peak Gate Current (tp=10µs)
Peak Gate Voltage (tp=10µs)
eStorage Temperature
eJunction Temperature
hThermal Resistance
SYMBOL
VDRM, VRRM
IT(RMS)
ITSM
I2t
PGM
PG (AV)
IGM
VGM
Tstg
TJ
ΘJA
CS223
-2M
CS223
-2N
600 800
2.0
10
0.24
2.0
0.1
1.0
8.0
-40 to +150
-40 to +125
62.5
SELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
taIDRM, IRRM
IDRM, IRRM
aIGT
IH
.DVGT
VTM
dv/dt
Rated VDRM, VRRM, RGK=1KΩ
Rated VDRM, VRRM, RGK=1KΩ, TC=125°C
VD=12V
RGK=1KΩ
VD=12V
ITM=4.0A, tp=380µs
VD=2/3 VDRM, RGK=1KΩ, TC=125°C
10
TYP
20
1.4
MAX
10
100
200
2.0
0.8
1.7
UNITS
V
A
A
A2s
W
W
A
V
°C
°C
°C/W
UNITS
µA
µA
µA
mA
V
V
V/µs
www www.DataSheet4U.comR0 (11-May 2004)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet CS223-2N.PDF ] | |
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| CS223-2M | (CS223-2M/N) SILICON CONTROLLED RECTIFIER | Central Semiconductor |
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