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PDF LM5101SDX Data sheet ( Hoja de datos )

Número de pieza LM5101SDX
Descripción High Voltage High Side and Low Side Gate Driver
Fabricantes National Semiconductor 
Logotipo National Semiconductor Logotipo



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January 2004
LM5100/LM5101
High Voltage High Side and Low Side Gate Driver
General Description
The LM5100/LM5101 High Voltage Gate Drivers are de-
signed to drive both the high side and the low side
N-Channel MOSFETs in a synchronous buck or a half bridge
configuration. The floating high-side driver is capable of
operating with supply voltages up to 100V. The outputs are
independently controlled with CMOS input thresholds
(LM5100) or TTL input thresholds (LM5101). An integrated
high voltage diode is provided to charge the high side gate
drive bootstrap capacitor. A robust level shifter operates at
high speed while consuming low power and providing clean
level transitions from the control logic to the high side gate
driver. Under-voltage lockout is provided on both the low
side and the high side power rails. This device is available in
the standard SOIC-8 pin and the LLP-10 pin packages.
n Bootstrap supply voltage range up to 118V DC
n Fast propagation times (25 ns typical)
n Drives 1000 pF load with 15 ns rise and fall times
n Excellent propagation delay matching (3 ns typical)
n Supply rail under-voltage lockouts
n Low power consumption
n Pin compatible with HIP2100/HIP2101
Typical Applications
n Current Fed push-pull converters
n Half and Full Bridge power converters
n Synchronous buck converters
n Two switch forward power converters
n Forward with Active Clamp converters
Features
n Drives both a high side and low side N-Channel
MOSFET
n Independent high and low driver logic inputs (TTL for
LM5101 or CMOS for LM5100)
Package
n SOIC-8
n LLP-10 (4 mm x 4 mm)
Simplified Block Diagram
FIGURE 1.
© 2004 National Semiconductor Corporation DS200888
20088803
www.national.com

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LM5101SDX pdf
Switching Characteristics (Continued)
Specifications in standard typeface are for TJ = +25˚C, and those in boldface type apply over the full operating junction tem-
perature range. Unless otherwise specified, VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
LM5101
tPW Minimum Input Pulse Width that
Changes the Output
50 ns
tBS Bootstrap Diode Turn-Off Time
IF = 20 mA,
IR = 200 mA
50 ns
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation of
the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the
Electrical Characteristics tables.
Note 2: The human body model is a 100 pF capacitor discharged through a 1.5kresistor into each pin. 2 kV for all pins except Pin 2, Pin 3 and Pin 4 which are
rated at 500V.
Note 3: 4 layer board with Cu finished thickness 1.5/1/1/1.5 oz. Maximum die size used. 5x body length of Cu trace on PCB top. 50 x 50mm ground and power
planes embedded in PCB. See Application Note AN-1187.
Note 4: Min and Max limits are 100% production tested at 25˚C. Limits over the operating temperature range are guaranteed through correlation using Statistical
Quality Control (SQC) methods. Limits are used to calculate National’s Average Outgoing Quality Level (AOQL).
Note 5: The θJA is not a given constant for the package and depends on the printed circuit board design and the operating environment.
5 www.national.com

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LM5101SDX arduino
Physical Dimensions inches (millimeters) unless otherwise noted
Controlling dimension is inch. Values in [ ] are millimeters.
Notes: Unless otherwise specified.
1. Standard lead finish to be 200 microinches/5.08 micrometers minimum lead/tin (solder) on copper.
2. Dimension does not include mold flash.
3. Reference JEDEC registration MS-012, Variation AA, dated May 1990.
SOIC-8 Outline Drawing
NS Package Number M08A
11 www.national.com

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