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PDF LM5112 Data sheet ( Hoja de datos )

Número de pieza LM5112
Descripción Tiny 7A MOSFET Gate Driver
Fabricantes National Semiconductor 
Logotipo National Semiconductor Logotipo



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October 2004
LM5112
Tiny 7A MOSFET Gate Driver
General Description
The LM5112 MOSFET gate driver provides high peak gate
drive current in the tiny LLP-6 package (SOT23 equivalent
footprint) with improved package power dissipation required
for high frequency operation. The compound output driver
stage includes MOS and bipolar transistors operating in
parallel that together sink more than 7A peak from capacitive
loads. Combining the unique characteristics of MOS and
bipolar devices reduces drive current variation with voltage
and temperature. Under-voltage lockout protection is pro-
vided to prevent damage to the MOSFET due to insufficient
gate turn-on voltage. The LM5112 provides both inverting
and non-inverting inputs to satisfy requirements for inverting
and non-inverting gate drive with a single device type.
Features
n Compound CMOS and bipolar outputs reduce output
current variation
n 7A sink/3A source current
n Fast propagation times (25 ns typical)
n Fast rise and fall times (14 ns/12 ns rise/fall with 2 nF
load)
n Inverting and non-inverting inputs provide either
configuration with a single device
n Supply rail under-voltage lockout protection
n Dedicated input ground (IN_REF) for split supply or
single supply operation
n Power Enhanced 6-pin LLP package (3.0mm x 3.0mm)
n Output swings from VCC to VEE which can be negative
relative to input ground
Block Diagram
Block Diagram of LM5112
20066801
© 2004 National Semiconductor Corporation DS200668
www.national.com

1 page




LM5112 pdf
Typical Performance Characteristics
Supply Current vs Frequency
Supply Current vs Capacitive Load
20066807
Rise and Fall Time vs Supply Voltage
20066808
Rise and Fall Time vs Temperature
20066809
Rise and Fall Time vs Capacitive Load
20066810
Delay Time vs Supply Voltage
20066811
5
20066812
www.national.com

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