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PDF MRF5015 Data sheet ( Hoja de datos )
| Número de pieza | MRF5015 | |
| Descripción | N-CHANNEL BROADBAND RF POWER FET | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MRF5015 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode
Designed for broadband commercial and industrial applications at frequen-
cies to 520 MHz. The high gain and broadband performance of this device
makes it ideal for large–signal, common source amplifier applications in 12.5
volt mobile, and base station FM equipment.
• Guaranteed Performance at 512 MHz, 12.5 Volts
Output Power — 15 Watts
Power Gain — 10 dB Min
Efficiency — 50% Min
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
• All Gold Metal for Ultra Reliability
• Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 512 MHz, 2 dB Overdrive
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Order this document
by MRF5015/D
MRF5015
15 W, 512 MHz, 12.5 VOLTS
N–CHANNEL BROADBAND
RF POWER FET
CASE 319–07, STYLE 3
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 5 mAdc)
Zero Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0)
Gate–Source Leakage Current (VGS = 20 Vdc, VDS = 0)
V(BR)DSS
IDSS
IGSS
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Symbol
RθJC
Min
36
—
—
Value
36
36
± 20
6
50
0.29
– 65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Max Unit
3.5 °C/W
Typ Max Unit
— — Vdc
— 5 mAdc
— 2 µAdc
(continued)
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF5015
1
1 page  
f
MHz
50
100
200
300
400
500
700
850
1000
f
MHz
50
100
200
300
400
500
700
850
1000
f
MHz
50
100
200
300
400
500
700
850
1000
f
MHz
50
100
200
300
400
500
700
850
1000
Table 1. Common Source Scattering Parameters (VDS = 12.5 V)
S11
|S11|
∠φ
0.63 –123
0.62 –142
0.70 –152
0.78 –157
0.84 –162
0.88 –165
0.93 –171
0.95 –175
0.96 –178
|S21|
8
4
1.8
1.1
0.70
0.49
0.28
0.20
0.15
ID = 50 mA
S21
∠φ
100
82
61
47
36
28
17
13
10
|S12|
0.063
0.063
0.056
0.046
0.037
0.029
0.016
0.010
0.007
S12
∠φ
11
–6
– 23
– 35
– 42
– 46
– 45
– 31
11
S11
|S11|
∠φ
0.67 –136
0.66 –153
0.71 –160
0.77 –163
0.82 –165
0.86 –168
0.91 –173
0.93 –176
0.95 –179
|S21|
9.1
4.6
2.2
1.3
0.89
0.64
0.37
0.27
0.20
ID = 100 mA
S21
∠φ
99
84
66
54
44
36
25
20
16
|S12|
0.047
0.048
0.043
0.037
0.031
0.025
0.015
0.010
0.009
S12
∠φ
10
–3
–17
– 26
– 32
– 35
– 30
–11
25
S11
|S11|
∠φ
0.81 –150
0.81 –164
0.82 –170
0.84 –173
0.86 –174
0.88 –175
0.91 –178
0.93 180
0.94 178
|S21|
11.1
5.6
2.7
1.7
1.2
0.92
0.57
0.43
0.33
ID = 500 mA
S21
∠φ
98
86
73
63
55
47
35
29
23
|S12|
0.027
0.027
0.025
0.023
0.020
0.018
0.013
0.013
0.014
S12
∠φ
11
2
–5
–9
–9
–7
7
26
44
S11
|S11|
∠φ
0.86 –144
0.85 –161
0.86 –170
0.87 –173
0.89 –175
0.91 –176
0.93 –179
0.94 179
0.95 177
|S21|
10.1
5.2
2.5
1.6
1.1
0.84
0.52
0.39
0.30
ID = 2.5 A
S21
∠φ
101
88
74
64
55
48
37
30
26
|S12|
0.022
0.022
0.021
0.019
0.017
0.015
0.013
0.014
0.016
S12
∠φ
15
5
–1
–4
–2
2
22
39
52
S22
|S22|
∠φ
0.79 –149
0.82 –162
0.86 –169
0.90 –171
0.93 –174
0.94 –175
0.97 –179
0.97 179
0.98 178
S22
|S22|
∠φ
0.82 –158
0.85 –168
0.87 –172
0.90 –174
0.92 –175
0.94 –177
0.96 –179
0.97 179
0.98 177
S22
|S22|
∠φ
0.85 –168
0.87 –174
0.88 –176
0.89 –177
0.91 –178
0.92 –179
0.94 180
0.95 178
0.96 177
S22
|S22|
∠φ
0.85 –171
0.87 –175
0.89 –177
0.90 –178
0.91 –178
0.93 –179
0.95 179
0.96 178
0.96 176
MOTOROLA RF DEVICE DATA
MRF5015
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MRF5015.PDF ] | |
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