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PDF HGTP14N41G3VL Data sheet ( Hoja de datos )
| Número de pieza | HGTP14N41G3VL | |
| Descripción | 14A 410V N-Channel Logic Level Voltage Clamping IGBTs | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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HGT1S14N41G3VLS, HGTP14N41G3VL
Data Sheet
December 2001
14A, 410V N-Channel, Logic Level, Voltage
Clamping IGBTs
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in
automotive ignition circuits. Unique features include an
active voltage clamp between the collector and the gate
which provides Self Clamped Inductive Switching (SCIS)
capability in ignition circuits. Internal diodes provide ESD
protection for the logic level gate. Both a series resistor and
a shunt resister are provided in the gate circuit
Formerly Developmental Type TA49360.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT1S14N41G3VLS
HGTP14N41G3VL
TO-263AB
TO-220AB
14N41GVL
14N41GVL
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, i.e. HGT1S14N41G3VLS9A
Symbol
COLLECTOR
GATE
R1
R2
EMITTER
Features
• Ignition Energy = 340mJ at TJ (STARTING) = 25oC
• Typical Internal Clamp Voltage = 410V at TJ = 25oC
• Logic Level Gate Drive
• ESD Gate Protection
• TJ = 175oC
• Internal Series and Shunt Gate Resistors
• 24V Reverse Battery Capability
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-263AB
COLLECTOR
G (FLANGE)
E
JEDEC TO-220AB
E
C
G
COLLECTOR
(FLANGE)
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGT1S14N41G3VLS, HGTP14N41G3VL Rev. B
1 page  
HGT1S14N41G3VLS, HGTP14N41G3VL
Typical Performance Curves Unless Otherwise Specified (Continued)
28
24
20
16
12
8
4
0
25
VGE = 5V
50 75 100 125 150
TC, CASE TEMPERATURE (oC)
175
2.2
2.0
1.8
1.6
1.4
1.2
1.0
-50
ICE = 1mA
VCE = VGE
25 100
TJ, JUNCTION TEMPERATURE (oC)
175
FIGURE 11. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 12. THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE
10000
1000
VECS = 24V
100
VCES = 300V
10
1
VCES = 250V
0.1
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 13. LEAKAGE CURRENT vs JUNCTION
TEMPERATURE
175
16
ICE = 6.5A, VGE = 5V, RG = 1kΩ
14
RESISTIVE tOFF
12
10
INDUCTIVE tOFF
8
6
RESISTIVE tON
4
2
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 14. SWITCHING TIME vs JUNCTION TEMPERATURE
2400
2000
FREQUENCY = 1MHz
1600
1200
CIES
800
400
0
0
CRES
COES
5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
8 IG(REF) = 1mA, RL = 1.25Ω, TJ = 25oC
6
VCE = 12V
4
2
VCE = 6V
0
0 8 16 24 32 40 48
QG, GATE CHARGE (nC)
FIGURE 16. GATE CHARGE WAVEFORMS
56
©2001 Fairchild Semiconductor Corporation
HGT1S14N41G3VLS, HGTP14N41G3VL Rev. B
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HGTP14N41G3VL.PDF ] | |
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