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STA500 데이터시트 PDF




ST Microelectronics에서 제조한 전자 부품 STA500은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 STA500 자료 제공

부품번호 STA500 기능
기능 30V 3.5A QUAD POWER HALF BRIDGE
제조업체 ST Microelectronics
로고 ST Microelectronics 로고


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STA500 데이터시트, 핀배열, 회로
STA500
30V 3.5A QUAD POWER HALF BRIDGE
s MINIMUM INPUT OUTPUT PULSE WIDTH
DISTORTION
MULTIPOWER BCD TECHNOLOGY
s 200mRdsON COMPLEMENTARY DMOS
OUTPUT STAGE
s CMOS COMPATIBLE LOGIC INPUTS
ms THERMAL PROTECTION
s THERMAL WARNING OUTPUT
os OVERVOLTAGE, UNDERVOLTAGE
.cPROTECTION
PowerSO36
ORDERING NUMBER: STA500
UDESCRIPTION
t4STA500 is a monolithic quad half bridge stage in Mul-
tipower BCD Technology. The device can be used as
dual bridge or reconfigured, by connecting CONFIG
epin to Vdd pin, as single bridge with double current
capability, and as half bridge (Binary mode) with half
current capability.
The device is particulary designed to make the output
stage of a stereo All-Digital High Efficiency (DDX™)
amplifier capable to deliver 30 + 30W output power
on 8load and 60W on 8load in bridge BTL con-
figuration or mono 60W on 4load. The input pins
have threshold proportional to Ibias pin voltage.
eAUDIO APPLICATION CIRCUIT (Dual BTL)
taSh+3.3V
IN1A
IN1A
IBIAS
CONFIG
29
23
24
PWRDN PWRDN 25
aR57 R59
10K 10K
FAULT
ww.DTH_WAR
C58
100nF
TRI-STATE
TH_WAR
IN1B
IN1B
VDD
VDD
VSS
VSS
27
26
28
30
21
22
33
34
C58
w U.com100nF
C53
100nF
C60
100nF
VCCSIGN
VCCSIGN
IN2A
IN2A
GND-Reg
GND-Clean
35
36
31
20
19
PROTECTIONS
&
LOGIC
REGULATORS
M3
M2
M5
M4
M17
M15
M16
et4IN2B
IN2B 32
heGNDSUB
1
M14
VCC1A
15 C30
1µF
17
OUT1A
16
OUT1A
14 GND1A
12 VCC1B
C31
11 1µF
OUT1B
10
OUT1B
13 GND1B
7 VCC2A
C32
1µF
8
OUT2A
9
OUT2A
6 GND2A
4 VCC2B
C33
3 1µF
OUT2B
2
OUT2B
5 GND2B
L18 22µH
C20
100nF
C52
330pF R98
6
R63 R100
20 6
C21
100nF
L19 22µH
C99
100nF
C23
470nF
C101
100nF
L113 22µH
C110
100nF
C109
330pF R103
6
R104 R102
20 6
C111
100nF
L112 22µH
C107
100nF
C108
470nF
C106
100nF
+VCC
C55
1000µF
SD00AU1148B
www.DataJuly 2003
1/10




STA500 pdf, 반도체, 판매, 대치품
STA500
ABSOLUTE MAXIMUM RATINGS
Symbol
VCE
Vmax
Top
Tstg, Tj
Parameter
DC Supply Voltage (Pin 4,7,12,15)
Maximum Voltage on pins (23 to 32)
Operating Temperature Range
Storage and Junction Temperature
THERMAL DATA
Symbol
Tj-case
TjSD
Twarn
thSD
Parameter
Thermal Resistance Junction to Case (thermal pad)
Thermal shut-down junction temperature
Thermal warning temperature
Thermal shut-down hysteresis
Value
40
5.5
0 to 70
-40 to 150
Unit
V
V
°C
°C
Min.
Typ.
150
130
25
Max.
2.5
Unit
°C/W
°C
°C
°C
ELECTRICAL CHARACTERISTCS
(Ibias = 3.3V; Vcc = 28V; Tamb = 25°C unless otherwise specified)
Symbol
Parameter
Test conditions
RdsON Power Pchannel/Nchannel
MOSFET RdsON
Id=1A;
Idss Power Pchannel/Nchannel
leakage Idss
Vcc=35V
gN Power Pchannel RdsON
Matching (*)
Id=1A
gP Power Nchannel RdsON
Matching (*)
Id=1A
Dt_s Low current Dead Time (static) see test circuit no.1; see fig. 1
Dt_d High current Dead Time (dinamic) L=22µH; C = 470nF; Rl = 8
Id = 3.5A; see fig. 3
td ON Turn-on delay time
Resistive load
td OFF Turn-off delay time
Resistive load
tr Rise time
Resistive load; as fig. 1
tf Fall time
Resistive load; as fig. 1
VCC Supply voltage operating voltage
VIN-H High level input voltage
VIN-L Low level input voltage
IIN-H Hi level Input current
IIN-L Low level input current
IPWRDN-H Hi level PWRDN pin input current
VL Low logical state voltage VL (pin
PWRDN, TRISTATE) (note 1)
VH High logical state voltage VH (pin
PWRDN, TRISTATE) (note 1)
Pin voltage=Ibias
Pin voltage = 0.3V
Ibias = 3.3V
Ibias = 3.3V
Ibias = 3.3V
Min.
Typ.
200
Max.
270
Unit
m
50 µA
95 %
95 %
10 20 ns
50 ns
100 ns
100 ns
25 ns
25 ns
9 VOV V
Ibias/2
+300mV
V
Ibias/2
-300mV
V
1 µA
1 µA
35 µA
0.8 V
1.7 V
4/10

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STA500 전자부품, 판매, 대치품
Figure 4. Typical Quad Half Bridge Configuration
STA500
+3.3V
IN1A
IN1A
IBIAS
CONFIG
29
23
24
PWRDN PWRDN 25
R57 R59
10K 10K
FAULT
TH_WAR
C58
100nF
C58
100nF
TRI-STATE
TH_WAR
IN1B
IN1B
VDD
VDD
VSS
VSS
C53
100nF
VCCSIGN
C60
100nF
VCCSIGN
IN2A
IN2A
GND-Reg
GND-Clean
27
26
28
30
21
22
33
34
35
36
31
20
19
PROTECTIONS
&
LOGIC
REGULATORS
IN2B
IN2B 32
GNDSUB
1
M3
M2
M5
M4
M17
M15
M16
M14
VCC1P
15
17
OUTPL
16
OUTPL
14 PGND1P
12 VCC1N
C51
11 1µF
OUTNL
10
OUTNL
13 PGND1N
7 VCC2P
R41
20
C41
330pF
L11 22µH
C71
100nF
R51
6
C61
100nF
R42
20
C42
330pF
L12 22µH
C72
100nF
R52
6
8
OUTPR
9
OUTPR
6 PGND2P
4 VCC2N
C52
3 1µF
OUTNR
2
OUTNR
5 PGND2N
D03AU1474
R43
20
C43
330pF
L13 22µH
C73
100nF
R53
6
C62
100nF
R44
20
C44
330pF
L14 22µH
C74
100nF
R54
6
R61
5K C31 820µF
C81
100nF
R62
5K
C91
1µF
R63
5K C32 820µF
C82
100nF
R64
5K
C92
1µF
R65
5K C33 820µF
C83
100nF
R66
5K
C93
1µF
R67
5K C34 820µF
C84
100nF
R68
5K
C94
1µF
+VCC
C21
2200µF
Note:
The diagran showed below, have been obtained using the demonstration board described in the application
Note AN1456 (STA304 + STA500 Digital Audioprocessor evolution board evaluating manual - Jan 2002), refer
to the schematic shown in fig. 1).
For the Quad Half Bridge Configuration (fig. 4), refers to the application note AN1661 (STA308 Half Bridge
Board - March 2003)
7/10

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