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STA505 데이터시트 PDF




ST Microelectronics에서 제조한 전자 부품 STA505은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 STA505 자료 제공

부품번호 STA505 기능
기능 40V 3.5A QUAD POWER HALF BRIDGE
제조업체 ST Microelectronics
로고 ST Microelectronics 로고


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STA505 데이터시트, 핀배열, 회로
STA505
40V 3.5A QUAD POWER HALF BRIDGE
s MINIMUM INPUT OUTPUT PULSE WIDTH
DISTORTION
MULTIPOWER BCD TECHNOLOGY
s 200mRdsON COMPLEMENTARY DMOS
OUTPUT STAGE
s CMOS COMPATIBLE LOGIC INPUTS
ms THERMAL PROTECTION
s THERMAL WARNING OUTPUT
os UNDER VOLTAGE PROTECTION
.cDESCRIPTION
USTA505 is a monolithic quad half bridge stage in Mul-
tipower BCD Technology. The device can be used as
t4dual bridge or reconfigured, by connecting CONFIG
pin to Vdd pin, as single bridge with double current
ecapability, and as half bridge (Binary mode) with half
current capability.
eThe device is particularly designed to make the out-
PowerSO36
ORDERING NUMBER: STA505
put stage of a stereo All-Digital High Efficiency
(DDX™) amplifier capable to deliver 50 + 50W @
THD = 10% at Vcc 30V output power on 8load and
80W @ THD = 10% at Vcc 36V on 8load in single
BTL configuration.
The input pins have threshold proportional to Ibias
pin voltage.
hAUDIO APPLICATION CIRCUIT (Dual BTL)
taS+3.3V
IN1A
IN1A
IBIAS
CONFIG
29
23
24
aPWRDN PWRDN 25
R57 R59
10K 10K
FAULT
ww.DTH_WAR
C58
100nF
TRI-STATE
TH_WAR
IN1B
IN1B
VDD
VDD
VSS
VSS
27
26
28
30
21
22
33
34
C58
w U.com100nF
C53
100nF
C60
100nF
VCCSIGN
VCCSIGN
IN2A
IN2A
GND-Reg
GND-Clean
35
36
31
20
19
PROTECTIONS
&
LOGIC
REGULATORS
M3
M2
M5
M4
M17
M15
M16
et4IN2B
IN2B 32
eGNDSUB
h1
M14
VCC1A
15 C30
1µF
17
OUT1A
16
OUT1A
14 GND1A
12 VCC1B
C31
11 1µF
OUT1B
10
OUT1B
13 GND1B
7 VCC2A
C32
1µF
8
OUT2A
9
OUT2A
6 GND2A
4 VCC2B
C33
3 1µF
OUT2B
2
OUT2B
5 GND2B
L18 22µH
C20
100nF
C52
330pF R98
6
R63 R100
20 6
C21
100nF
L19 22µH
C99
100nF
C23
470nF
C101
100nF
L113 22µH
C110
100nF
C109
330pF R103
6
R104 R102
20 6
C111
100nF
L112 22µH
C107
100nF
C108
470nF
C106
100nF
D00AU1148B
+VCC
C55
1000µF
www.DataSJuly 2003
1/9




STA505 pdf, 반도체, 판매, 대치품
STA505
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCE DC Supply Voltage (Pin 4,7,12,15)
Vmax Maximum Voltage on pins 23 to 32
Top Operating Temperature Range
Tstg, Tj Storage and Junction Temperature
Value
40
5.5
0 to 70
-40 to 150
Unit
V
V
°C
°C
THERMAL DATA
Symbol
Parameter
Tj-case
TjSD
Twarn
thSD
Thermal Resistance Junction to Case (thermal pad)
Thermal shut-down junction temperature
Thermal warning temperature
Thermal shut-down hysteresis
Min.
Typ.
150
130
25
Max.
2.5
Unit
°C/W
°C
°C
°C
ELECTRICAL CHARACTERISTCS (Ibias = 3.3V; Vcc = 30V; T = 25°C unless otherwise specified)
Symbol
Parameter
Test conditions
Min. Typ. Max.
Unit
RdsON Power Pchannel/Nchannel
MOSFET RdsON
Id=1A;
200 270 m
Idss Power Pchannel/Nchannel
leakage Idss
Vcc=35V
50 µA
gN Power Pchannel RdsON
Matching
Id=1A
95 %
gP Power Nchannel RdsON
Matching
Id=1A
95 %
Dt_s Low current Dead Time (static) see test circuit no.1; see fig. 1
10 20 ns
Dt_d High current Dead Time (dinamic) L=22µH; C = 470nF; Rl = 8
Id=3.5A; see fig. 3
50 ns
td ON Turn-on delay time
Resistive load
100 ns
td OFF Turn-off delay time
Resistive load
100 ns
tr Rise time
Resistive load; as fig.1;
25 ns
tf Fall time
Resistive load; as fig. 1;
25 ns
VCC Supply voltage operating voltage
9 36 V
VIN-H High level input voltage
Ibias/2
+300mV
V
VIN-L Low level input voltage
Ibias/2
-300mV
V
IIN-H Hi level Input current
Pin voltage = Ibias
1 µA
IIN-L Low level input current
Pin voltage = 0.3V
1 µA
4/9

4페이지










STA505 전자부품, 판매, 대치품
STA505
Figure 4. Typical Single BTL Configuration to obtain 80W @ THD 10%, RL = 8, VCC = 36V (note 1)
+3.3V
100nF
10K 100nF
X7R
TH_WAR
nPWRDN
10K
IBIAS
GND-Clean
GND-Reg
VDD
VDD
CONFIG
TH_WAR
PWRDN
FAULT
100nF
IN1A
IN1B
TRI-STATE
IN1A
IN1B
IN2A
IN2B
VSS
VSS
100nF
X7R
VCCSIGN
23
19
20
21
22
24
28
25
27
26
29
30
31
32
33
34
35
100nF
X7R
Add.
VCCSIGN
GNDSUB
36
1
18 N.C.
17
OUT1A
16
OUT1A
11
OUT1B
10
OUT1B
OUT2A
9
OUT2A
8
OUT2B
3
OUT2B
2
VCC1A
15
VCC1B
12
VCC2A
7
VCC2B
4
GND1A
14
GND1B
13
GND2A
6
GND2B
5
22µH
100nF
FILM
22
1/2W
6.2
1/2W
6.2
330pF 1/2W
22µH
100nF
X7R
470nF
FILM
100nF
X7R
100nF
FILM
+36V
1µF 2200µF
X7R 63V
+36V
1µF
X7R
8
D01AU1274
Note: 1. "A PWM modulator as driver is needed . In particular, this result is performed using the STA30X+STA50X demo board".
Figure 5. Typical Quad Half bridge Configuration
+3.3V
IN1A
IN1A
IBIAS
CONFIG
29
23
24
PWRDN PWRDN 25
R57 R59
10K 10K
FAULT
TH_WAR
C58
100nF
C58
100nF
TRI-STATE
TH_WAR
IN1B
IN1B
VDD
VDD
VSS
VSS
C53
100nF
VCCSIGN
C60
100nF
VCCSIGN
IN2A
IN2A
GND-Reg
GND-Clean
27
26
28
30
21
22
33
34
35
36
31
20
19
PROTECTIONS
&
LOGIC
REGULATORS
IN2B
IN2B 32
GNDSUB
1
M3
M2
M5
M4
M17
M15
M16
M14
VCC1P
15
17
OUTPL
16
OUTPL
14 PGND1P
12 VCC1N
C51
11 1µF
OUTNL
10
OUTNL
13 PGND1N
7 VCC2P
R41
20
C41
330pF
L11 22µH
C71
100nF
R51
6
C61
100nF
R42
20
C42
330pF
L12 22µH
C72
100nF
R52
6
8
OUTPR
9
OUTPR
6 PGND2P
4 VCC2N
C52
3 1µF
OUTNR
2
OUTNR
5 PGND2N
D03AU1474
R43
20
C43
330pF
L13 22µH
C73
100nF
R53
6
C62
100nF
R44
20
C44
330pF
L14 22µH
C74
100nF
R54
6
For more information refer to the application notes AN1456 and AN1661
R61
5K C31 820µF
C81
100nF
R62
5K
C91
1µF
R63
5K C32 820µF
C82
100nF
R64
5K
C92
1µF
R65
5K C33 820µF
C83
100nF
R66
5K
C93
1µF
R67
5K C34 820µF
C84
100nF
R68
5K
C94
1µF
+VCC
C21
2200µF
7/9

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