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PDF STA506 Data sheet ( Hoja de datos )
| Número de pieza | STA506 | |
| Descripción | 40V 4A QUAD POWER HALF BRIDGE | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STA506 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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STA506
40V 4A QUAD POWER HALF BRIDGE
s MINIMUM INPUT OUTPUT PULSE WIDTH
DISTORTION
MULTIPOWER BCD TECHNOLOGY
s 200mΩ RdsON COMPLEMENTARY DMOS
OUTPUT STAGE
s CMOS COMPATIBLE LOGIC INPUTS
ms THERMAL PROTECTION
s THERMAL WARNING OUTPUT
os UNDER VOLTAGE PROTECTION
.cDESCRIPTION
USTA506 is a monolithic quad half bridge stage in Mul-
tipower BCD Technology. The device can be used as
t4dual bridge or reconfigured, by connecting CONFIG
pin to Vdd pin, as single bridge with double current
ecapability, and as half bridge (Binary mode) with half
current capability.
eThe device is particularly designed to make the out-
hput stage of a stereo All-Digital High Efficiency
PowerSO36
ORDERING NUMBER: STA506
(DDX™) amplifier capable to deliver 60 + 60W @
THD = 10% at Vcc 32V output power on 8Ω load and
80W @ THD = 10% at VCC 36V on 8Ω load in single
BTL configuration. In single BTL configuration is also
capable to deliver a peak of 120W @THD = 10% at
VCC = 32V on 4Ω load (t ≤1sec)
The input pins have threshold proportional to Ibias
pin voltage.
SAUDIO APPLICATION CIRCUIT (Dual BTL)
ta+3.3V
IN1A
IN1A
IBIAS
CONFIG
29
23
24
aPWRDN PWRDN 25
R57 R59
.D10K 10K
FAULT
wwwTH_WAR
C58
100nF
TRI-STATE
TH_WAR
IN1B
IN1B
VDD
VDD
VSS
VSS
27
26
28
30
21
22
33
34
PROTECTIONS
&
LOGIC
REGULATORS
M3
M2
M5
M4
VCC1A
15 C30
1µF
17
OUT1A
16
OUT1A
14 GND1A
12 VCC1B
11
OUT1B
10
OUT1B
C31
1µF
13 GND1B
7 VCC2A
L18 22µH
C20
100nF
C52
330pF R98
6
R63 R100
20 6
C21
100nF
L19 22µH
C99
100nF
C23
470nF
C101
100nF
+VCC
C55
1000µF
C58
100nF
C53
100nF
C60
100nF
VCCSIGN
VCCSIGN
IN2A
IN2A
GND-Reg
GND-Clean
35
36
31
20
19
IN2B
IN2B 32
GNDSUB
1
September 2003
M17 C32
1µF
8
L113 22µH
mOUT2A
9
oOUT2A
.cM15
6 GND2A
C110
100nF
C109
330pF R103
6
C107
100nF
C108
t4UM16
4 VCC2B
C33
R104 R102
20 6
470nF
C106
100nF
3 1µF
eC111
OUT2B
2
100nF
eOUT2B
L112 22µH
hM14
5 GND2B
www.DataSD00AU1148B
1/9
1 page  
STA506
ELECTRICAL CHARACTERISTCS (continued)
Symbol
Parameter
Test conditions
IIN-L Low level input current
Pin Voltage = 0.3V
IPWRDN-H Hi level PWRDN pin input current Ibias = 3.3V
VL Low logical state voltage VL (pin Ibias = 3.3V
PWRDN, TRISTATE) (note 1)
VH High logical state voltage VH (pin Ibias = 3.3V
PWRDN, TRISTATE) (note 1)
IVCC- Supply CURRENT from Vcc in
PWRDN Power Down
PWRDN = 0
IFAULT
Output Current pins
FAULT -TH-WARN when
FAULT CONDITIONS
Vpin = 3.3V
IVCC-hiz Supply Current from Vcc in Tri-
state
VCC = 30V; Tri-state = 0
IVCC
Supply Current from Vcc in
operation
both channel switching)
VCC =30V;
Input Pulse width = 50% Duty;
Switching Frequency = 384KHz;
No LC filters;
IVCC-q Isc (short circuit current limit)
(note 2)
VOUT-SH Undervoltage protection threshold
VOV Output minimum pulse width
No Load
Min.
0.8
4
70
Typ.
1
35
Max.
1.7
3
1
22
80
68
7
150
Unit
µA
µA
V
V
mA
mA
mA
mA
A
V
ns
Notes: 1. The following table explains the VL, VH variation with Ibias
Ibias
VLmin
VHmax
Unit
2.7 0.7 1.5
V
3.3 0.8 1.7
V
5
0.85
1.85
V
Note 2: If used in single BTL configuration, the device may be not short circuit protected
LOGIC TRUTH TABLE (see fig. 2)
TRI-STATE
INxA
INxB
Q1
Q2
Q3
0
x
x
OFF
OFF
OFF
1
0
0
OFF
OFF
ON
1
0
1
OFF
ON
ON
1
1
0
ON
OFF
OFF
1 1 1 ON ON OFF
Q4
OFF
ON
OFF
ON
OFF
OUTPUT
MODE
Hi-Z
DUMP
NEGATIVE
POSITIVE
Not used
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STA506.PDF ] | |
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