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MSA-0900 데이터시트 PDF




Hewlett-Packard에서 제조한 전자 부품 MSA-0900은 전자 산업 및 응용 분야에서
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부품번호 MSA-0900 기능
기능 Cascadable Silicon Bipolar MMIC Amplifier
제조업체 Hewlett-Packard
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MSA-0900 데이터시트, 핀배열, 회로
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0900
Features
• Broadband, Minimum Ripple
Cascadable 50 Gain Block
• 8.0 ± 0.2 dB Typical Gain
Flatness from 0.1 to 4.0 GHz
• 3 dB Bandwidth:
0.1to6.0␣ GHz
• Low VSWR:
1.5:1from0.1to4.0␣ GHz
• 11.5 dBm Typical P1dB at
1.0␣ GHz
Description
The MSA-0900 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) chip. This MMIC is
designed for very wide bandwidth
industrial and military applica-
tions that require flat gain and low
VSWR.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
The recommended assembly
procedure is gold-eutectic die
attach at 400°C and either wedge
or ball bonding using 0.7 mil gold
wire.
This chip is intended to be used
with an external blocking capaci-
tor completing the shunt feedback
path (closed loop). Data sheet
characterization is given for a
45␣ pF capacitor. Low frequency
performance can be extended by
using a larger valued capacitor.[1]
Chip Outline[1]
Note:
1. Refer to the APPLICATIONS section
“Silicon MMIC Chip Use” for additional
information.
Typical Biasing Configuration
C Fbl
R bias (Required)
VCC > 12 V
C block
IN
4
3
1 MSA
2
RFC (Optional)
C block
Vd = 7.8 V
OUT
5965-9548E
6-430




MSA-0900 pdf, 반도체, 판매, 대치품
Typical Performance, TA = 25°C
(unless otherwise noted)
18 9
15
12
9
6
3
0
.02 0.1
Open Loop
Closed Loop
0.3 0.5 1.0
3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, Id = 35 mA.
0.1 GHz
8
11..00GGHHzz,,
44..00GGHHzz
7
6
5 6.0 GHz
4
10 20
30 40 50
Id (mA)
Figure 2. Power Gain vs. Current.
15
12
9
6
Id = 45 mA
Id = 35 mA
Id = 25 mA
7.0
6.5
6.0
0.1 0.2 0.3 0.5
5.5
1.0 2.0 4.0
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression and Noise Figure vs.
Frequency.
13
12
11 P1 dB
8
GP 7
7 NF
6
5
4
–55 –25
+25
+85 +125
TEMPERATURE (°C)
Figure 3. Output Power at 1 dB Gain
Compression, Noise Figure and Power
Gain vs. Case Temperature,
f = 1.0 GHz, Id = 35 mA.
MSA-0900 Bonding Diagram
Capacitor
(45 pF typ)
Input Trace
4
MSA
Die 2
1
2
53
Numbers refer to pin contacts listed on the Chip Outline.
Ground
Output
Trace
(backside
contact)
Ground
MSA-0900 Chip Dimensions
(3) OUTPUT
(BACKSIDE CONTACT)
(2) GROUND
(4) BONDPAD
FOR FEEDBACK
CAPACITOR
335 µm
13.2 mil
(1) INPUT
6-433
450 µm
17.7 mil
OPTIONAL
TOPSIDE
(5) OUTPUT[1]
Unless otherwise specified, tolerances are
±13 µm/±0.5 mils. Chip thickness is 114 µm/4.5 mil.
Bond Pads are 41 µm/1.6 mil typical on each side.
Note 1: Output contact is made by die attaching the
backside of the die.

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관련 데이터시트

부품번호상세설명 및 기능제조사
MSA-0900

Cascadable Silicon Bipolar MMIC Amplifier

Hewlett-Packard
Hewlett-Packard

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