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Datasheet P50AN4 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | P50AN4 | LCD_Module
P50AN4
Version : 1
TECHNICAL SPECIFICATION
Customer’s Confirmation
Date
By
m o .c Date : Dec. 16, U 1999 4 t e e This technical specification is subject to change without notice. h Please return 1 copy with your signature on this page for approval. S a at .D w w w
3,LI SHIN RD. 1,SCIENCE- | PRIME_VIEW | lcd |
2 | P50AN4AP01 | LCD_Module
P50AN4AP01
Version: Preliminary
TECHNICAL SPECIFICATION
Customer’s Confirmation
Date
By
The information contained herein is the exclusive property of Prime View International Co., Ltd. and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permiss | PRIME_VIEW | lcd |
P50 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | P5002CDG | N-Channel Enhancement Mode MOSFET P5002CDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 50mΩ @VGS = 10V
ID 20A
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±16
Continuous Drain Current Pulsed Drain Curren UNIKC mosfet | | |
2 | P5002CMG | N-Channel Enhancement Mode MOSFET P5002CMG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 50mΩ @VGS = 4.5V
ID 4A
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage Gate-Source Voltage
VDS 20 VGS ±8
Continuous Drain UNIKC mosfet | | |
3 | P5003QVG | N&P-Channel Enhancement Mode MOSFET P5003QVG
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V
RDS(ON) 27.5mΩ @VGS = 10V
-30V
45mΩ @VGS = -10V
ID Channel 10A N -7A P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 30 V UNIKC mosfet | | |
4 | P5003QVT | N&P-Channel Enhancement Mode MOSFET P5003QVT
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V
RDS(ON) 27.5mΩ @VGS =10V
-30V
45mΩ @VGS = -10V
ID Channel 10A N -7A P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 30 VD UNIKC mosfet | | |
5 | P500HVF01.0 | TFT LCD Module Global LCD Panel Exchange Center
www.panelook.com
P500HVF01.0 Product Specification Rev. 0.1
Model Name: P500HVF01.0
Issue Date : 2012/11/19
(Ϡ)Preliminary Specifications ( )Final Specifications
Customer Signature
Date AUO
Date
Approved By
Approval By PM Director Paley Fang
________________ AUO lcd | | |
6 | P5010A | N-Channel Enhancement Mode MOSFET P5010AS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
50mΩ @VGS = 10V
ID 34A
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Curre UNIKC mosfet | | |
7 | P5010AD | N-Channel Enhancement Mode MOSFET P5010AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
50mΩ @VGS = 10V
ID 23A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous D UNIKC mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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