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기능 (28FxxxW18) 1.8 V Wireless Flash Memory
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28F320W18 데이터시트, 핀배열, 회로
1.8 Volt Intel® Wireless Flash Memory
(W18)
28F320W18, 28F640W18, 28F128W18
Preliminary Datasheet
Product Features
s Performance
70 ns Asynchronous reads for 32 and 64 Mbit,
90 ns for 128 Mbit
m14 ns Clock to Data Output (tCHQV)
20 ns Page Mode Read Speed
o4-Word, 8-Word, and Continuous-Word Burst
Modes
.cBurst and Page Modes in Parameter and Main
Partitions
Programmable WAIT Configuration
Enhanced Factory Programming Mode@
U3.50 µs/Word (Typ)
Glueless 12 V interface for Fast Factory
t4Programming @ 8 µs/Word (Typ)
1.8 V Low-Power Programming @ 12 µs/Word
(Typ)
eProgram or Erase during Reads
s Architecture
eMultiple 4-Mbit Partitions
Dual-Operation: Read-While-Write or Read-
hWhile-Erase
Eight, 4-Kword Parameter Code and Data
Blocks
S32-Kword Main Code and Data Blocks
Top and Bottom Parameter Configurations
tas Power Operation
1.7 V to 1.95 V Read and Write Operations
1.7 V to 2.24 V VCCQ for I/O Isolation
aStandby Current: 5 µA (Typ)
Read Current: 7 mA (Typ)
s Software
5 µs (Typ) Program Suspend
5 µs (Typ) Erase Suspend
Intel® Flash Data Integrator (FDI) Software
Optimized
Intel Basic Command Set Compatible
Common Flash Interface (CFI)
s Quality and Reliability
Extended Temperature: 40 °C to +85 °C
Minimum 100,000 Erase Cycles per Block
ETOXVII Flash Technology (0.18 µm)
s Security
128-bit Protection Register: 64 Unique Device
Identifier Bits; 64 User-Programmable OTP
Bits
Absolute Write Protection VPP = GND
Erase/Program Lockout during Power
Transitions
Individual Dynamic Zero-Latency Block
Locking
Individual Block Lock-Down
s Density and Packaging
32 Mbit and 128 Mbit in a VF BGA Package
64 Mbit in a µBGA*Package
56 Active Ball Matrix, 0.75 mm Ball-Pitch
µBGA* and VF BGA Packages
16-bit wide Data Bus
.DThe 1.8 Volt Intel® Wireless Flash memory with flexible multi-partition dual-operation provides high-
performance asynchronous and synchronous burst reads. It is an ideal memory for low-voltage burst CPUs.
wCombining high read performance with flash memorys intrinsic non-volatility, 1.8 Volt Intel Wireless Flash
memory eliminates the traditional system-performance paradigm of shadowing redundant code memory from
slow nonvolatile storage to faster execution memory. It reduces the total memory requirement that increases
wreliability and reduces overall system power consumption and cost.
mThe 1.8 Volt Intel Wireless Flash memorys flexible multi-partition architecture allows programming or erasing to
woccur in one partition while reading from another partition. This allows for higher data write throughput
ocompared to single partition architectures. The dual-operation architecture also allows two processors to
.cinterleave code operations while program and erase operations take place in the background. The designer can
also choose the size of the code and data partitions via the flexible multi-partition architecture.
t4UThe 1.8 Volt Intel Wireless Flash memory is manufactured on Intels 0.18 µm ETOXVII process technology. It
is available in µBGA and VF BGA packages which are ideal for board-constrained applications.
SheeNotice: This document contains preliminary information on new products in production. The
taspecifications are subject to change without notice. Verify with your local Intel sales office that
you have the latest datasheet before finalizing a design.
.Da 290701-003
www June 2001




28F320W18 pdf, 반도체, 판매, 대치품
1.8 Volt Intel® Wireless Flash Memory ( W18)
4.16.1 Read Mode (CR.15) ............................................................................... 35
4.16.2 First Access Latency Count (CR.13-11)................................................. 35
4.16.3 WAIT Signal Polarity (CR.10)................................................................. 37
4.16.4 WAIT Signal Function ............................................................................ 38
4.16.5 Data Output Configuration (CR.9) .......................................................... 38
4.16.6 WAIT Delay Configuration (CR.8) .......................................................... 39
4.16.7 Burst Sequence Configuration (CR.7).................................................... 40
4.16.8 Clock Configuration (CR.6) .................................................................... 41
4.16.9 Burst Wrap (CR.5).................................................................................. 41
4.16.10 Burst Length (CR.2-0) ............................................................................ 42
5.0 Program and Erase Voltages .............................................................................. 43
5.1 Factory Program Mode ....................................................................................... 43
5.2 Programming Voltage Protection (VPP).............................................................. 43
6.0 Power Consumption ............................................................................................... 44
6.1 Active Power ....................................................................................................... 44
6.2 Automatic Power Savings ................................................................................... 44
6.3 Standby Power.................................................................................................... 44
6.4 Power-Up/Down Operation ................................................................................. 44
6.4.1 System Reset and RST#........................................................................ 44
6.4.2 VCC, VPP, and RST# Transitions.......................................................... 45
6.4.3 Power Supply Decoupling ...................................................................... 45
7.0 Electrical Specifications........................................................................................ 46
7.1 Absolute Maximum Ratings ................................................................................ 46
7.2 Extended Temperature Operation....................................................................... 47
7.3 Capacitance ........................................................................................................ 47
7.4 DC Characteristics .............................................................................................. 48
7.5 AC I/O Test Conditions ....................................................................................... 50
7.6 AC Read Characteristics..................................................................................... 51
7.7 AC Write Characteristics ..................................................................................... 61
7.8 Erase and Program Times .................................................................................. 63
7.9 Reset Specifications............................................................................................ 63
Appendix A Write State Machine States............................................................................. 65
Appendix B Common Flash Interface ................................................................................. 68
Appendix C Mechanical Specifications .............................................................................. 76
Appendix D Ordering Information......................................................................................... 77
iv

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28F320W18 전자부품, 판매, 대치품
1.0
1.1
1.8 Volt Intel® Wireless Flash Memory (W18)
Introduction
This datasheet contains information about the 1.8 Volt Intel® Wireless Flash memory family.
Section 1.0 provides a flash memory overview. Section 2.0 through Section 6.0 describe the
memory functionality. Section 7.0 describes the electrical specifications for extended temperature
product offerings.
Document Conventions
Many terms and phrases are used throughout this document as a short-hand version of full, and
more accurate verbiage:
The term 1.8 Vrefers to the full VCC voltage range of 1.7 V 1.95 V (except where noted)
and VPP = 12 Vrefers to 12 V ±5%.
When referring to registers, the term set means the bit is a 1, and clear means the bit is a 0.
Even though this product supports multiple package types, the terms pin and signal are often
used interchangeably to refer to the external signal connections on the package. (e.g., balls in
the case of µBGA*).
A word is 2 bytes, or 16 bits.
For voltage and ground signals, the signal name is denoted in all CAPS as seen in Section 2.2,
Signal Descriptionson page 4, whereas the voltage applied to the signal uses subscripted
notation. For example VPP refers to a signal, while VPP is a voltage level.
Throughout this document, references are made to top, bottom, parameter, and main partitions. To
clarify these references, the following conventions have been adopted:
A block is a group of bits (or words) that erase simultaneously with one block erase
instruction.
A main block contains 32 Kwords.
A parameter block contains 4 Kwords.
The Block Base Address (BBA) is the first address of a block.
A partition is a group of blocks that share erase and program circuitry and a common status
register. If one block is erasing or one word is programming, only the status register, rather
than array data, is available when any address within the same partition is read.
The Partition Base Address (PBA) is the first address of a partition. For example, on a 32-
Mbit top-parameter device, partition number 5 has a PBA of 140000h.
The top partition is located at the highest physical device address. This partition may be a
main partition or a parameter partition.
The bottom partition is located at the lowest physical device address. This partition may be a
main partition or a parameter partition.
A main partition contains only main blocks.
A parameter partition contains a mixture of main and parameter blocks.
A top parameter device (TPD) has the parameter partition at the top of the memory map with
the parameter blocks at the top of that partition. This was formerly referred to as top-boot
device.
Preliminary
1

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28F320W18

(28FxxxW18) 1.8 V Wireless Flash Memory

Intel
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