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NTGS3441T1 데이터시트 PDF




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부품번호 NTGS3441T1 기능
기능 Power MOSFET 1 Amp 20 Volts
제조업체 ON Semiconductor
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NTGS3441T1 데이터시트, 핀배열, 회로
NTGS3441T1
Power MOSFET
1 Amp, 20 Volts
P−Channel TSOP−6
Features
http://onsemi.com
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
1 AMPERE
Miniature TSOP−6 Surface Mount Package
Pb−Free Package is Available
mApplications
oPower Management in Portable and Battery−Powered Products, i.e.:
Cellular and Cordless Telephones, and PCMCIA Cards
.cMAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
URating
Symbol Value
Unit
Drain−to−Source Voltage
t4Gate−to−Source Voltage − Continuous
Thermal Resistance
eJunction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
eDrain Current − Continuous @ TA = 25°C
− Pulsed Drain Current (Tp t 10 mS)
hThermal Resistance
Junction−to−Ambient (Note 2)
STotal Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
ta− Pulsed Drain Current (Tp t 10 mS)
Thermal Resistance
Junction−to−Ambient (Note 3)
aTotal Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
.D− Pulsed Drain Current (Tp t 10 mS)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
wPurposes for 10 Seconds
VDSS
VGS
−20
"8.0
V
V
RqJA
Pd
ID
IDM
244
0.5
−1.65
−10
°C/W
W
A
A
RqJA
Pd
ID
IDM
128
1.0
−2.35
−14
°C/W
W
A
A
RqJA
Pd
ID
IDM
TJ, Tstg
TL
62.5
2.0
−3.3
−20
−55 to 150
260
°C/W
W
A
A
°C
°C
1. Minimum FR−4 or G−10PCB, operating to steady state.
w2. Mounted onto a 2square FR−4 board (1sq. 2 oz. cu. 0.06thick single
sided), operating to steady state.
m3. Mounted onto a 2square FR−4 board (1sq. 2 oz. cu. 0.06thick single
wsided), t t 5.0 seconds.
www.DataSheet4U.co© Semiconductor Components Industries, LLC, 2004
1
20 VOLTS
RDS(on) = 90 mW
P−Channel
1256
3
4
MARKING
DIAGRAM
TSOP−6
CASE 318G
1 STYLE 1
PT
W
1
PT = Device Code
W = Work Week
PIN ASSIGNMENT
Drain Drain Source
6 54
1 23
Drain Drain Gate
ORDERING INFORMATION
Device
Package
Shipping
NTGS3441T1
NTGS3441T1G
TSOP−6 3000 / Tape & Reel
TSOP−6 3000 / Tape& Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
April, 2004 − Rev. 4
NTGS3441T1/D




NTGS3441T1 pdf, 반도체, 판매, 대치품
NTGS3441T1
1200
900
VDS = 0 V
Ciss
TYPICAL ELECTRICAL CHARACTERISTICS
VGS = 0 V
TJ = 25°C
8
6
600 Crss
Ciss
300
0
8
Coss
Crss
4 0 4 8 12 16
−VGS
−VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
20
4
Qgs
2
QT
Qgd
VDD = −20 V
ID = −3.3 A
TJ = 25°C
0
0 2 4 68
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1.3 10
VGS = 0 V
1.2
ID = −250 mA
TJ = 25°C
8
1.1
16
0.9 4
0.8
2
0.7
0.6
−50 −25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Gate Threshold Voltage Variation
with Temperature
0
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
http://onsemi.com
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