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부품번호 | RD07MVS1 기능 |
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기능 | Silicon MOSFET Power Transistor | ||
제조업체 | Mitsubishi Electric | ||
로고 | |||
전체 8 페이지수
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD07MVS1
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
DESCRIPTION
RD07MVS1 is a MOS FET type transistor
specifically designed for VHF/UHF RF
power amplifiers applications.
OUTLINE DRAWING
6.0+/-0.15
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
FEATURES
•High power gain:
2
Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz
•High Efficiency: 60%typ. (175MHz)
•High Efficiency: 55%typ. (520MHz)
mAPPLICATION
oFor output stage of high power amplifiers in
VHF/UHF band mobile radio sets.
INDEX MARK
(Gate)
t4U.cABSOLUTE MAXIMUM RATINGS
e(Tc=25°C UNLESS OTHERWISE NOTED)
eSYMBOL
PARAMETER
CONDITIONS
VDSS Drain to source voltage Vgs=0V
hVGSS Gate to source voltage Vds=0V
Pch Channel dissipation Tc=25°C
SPin Input Power
Zg=Zl=50Ω
taID Drain Current
-
Tj Junction Temperature
-
aTstg Storage temperature
-
Rth j-c Thermal resistance
Junction to case
.DNote 1: Above parameters are guaranteed independently.
RATINGS
30
+/- 20
50
1.5
3
150
-40 to +125
2.5
UNIT
V
V
W
W
A
°C
°C
°C/W
(0.25)
3
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
wSYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN TYP MAX.
wIDSS Zero gate voltage drain current VDS=17V, VGS=0V
- - 200
wIGSS Gate to source leak current
VGS=10V, VDS=0V
- -1
UNIT
uA
uA
(0.25)
VTH
mPout1
.coηD1
Pout2
t4UηD2
Gate threshold Voltage
Output power
Drain efficiency
Output power
Drain efficiency
Load VSWR tolerance
ataSheeLoad VSWR tolerance
VDS=12V, IDS=1mA
f=175MHz , VDD=7.2V
Pin=0.3W,Idq=700mA
f=520MHz , VDD=7.2V
Pin=0.7W,Idq=750mA
VDD=9.2V,Po=7W(PinControl)
f=175MHz,Idq=700mA,Zg=50Ω
Load VSWR=20:1(All Phase)
VDD=9.2V,Po=7W(PinControl)
f=520MHz,Idq=750mA,Zg=50Ω
Load VSWR=20:1(All Phase)
.DNote : Above parameters , ratings , limits and conditions are subject to change.
1.4 1.7 2.4
78 -
55 60
-
78 -
50 55
-
No destroy
No destroy
V
W
%
W
%
-
-
wwwRD07MVS1
MITSUBISHI ELECTRIC
1/8
REV.7 2 Apr. 2004
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD07MVS1
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
TYPICAL CHARACTERISTICS
Vgs-Ids CHARACTERISTICS 2
10
Vds=10V
8 Tc=-25~+75°C
-25°C
+25°C
6 +75°C
4
2
0
2345
Vgs(V)
RD07MVS1
MITSUBISHI ELECTRIC
4/8
REV.7 2 Apr. 2004
4페이지 ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD07MVS1
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD07MVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=750mA)
Freq.
S11
S21
S12
S22
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
100 0.890 -174.1 5.508 82.1 0.016 -3.6 0.790 -172.8
150 0.897 -175.6 3.613 75.0 0.015 -8.5 0.801 -174.0
175 0.899 -176.0 3.028 72.4 0.015 -9.6 0.802 -174.1
200 0.901 -176.3 2.604 70.1 0.014 -10.9 0.815 -174.0
250 0.907 -176.7 2.019 65.6 0.014 -12.7 0.844 -174.1
300 0.913 -177.0 1.614 60.7 0.012 -15.3 0.843 -174.1
350 0.918 -177.3 1.308 57.1 0.011 -15.8 0.860 -174.4
400 0.924 -177.8 1.102 54.1 0.010 -14.2 0.879 -175.0
450 0.928 -178.0 0.929 50.1 0.009 -14.8 0.882 -175.1
500 0.933 -178.3 0.790 48.6 0.008 -9.6 0.895 -175.5
520 0.935 -178.5 0.753 47.6 0.007 -7.7 0.901 -175.8
550 0.937 -178.8 0.692 45.3 0.007 -5.6 0.906 -176.2
600 0.940 -179.2 0.595 43.6 0.006 0.4 0.907 -176.6
650 0.942 -179.4 0.529 42.4 0.006 17.1 0.916 -177.2
700 0.944 -179.8 0.467 40.2 0.005 21.8 0.923 -177.6
750 0.947 179.8 0.416 39.4 0.005 40.9 0.921 -178.0
800 0.948 179.4 0.374 38.6 0.004 52.0 0.930 -178.8
850 0.949 179.0 0.343 37.6 0.005 67.1 0.933 -178.9
900 0.951 178.6 0.304 36.5 0.005 72.6 0.932 -179.3
950 0.951 178.2 0.284 37.6 0.006 85.8 0.937 179.8
1000 0.952 177.9 0.262 35.1 0.007 85.1 0.938 179.7
1050 0.950 177.4 0.234 36.0 0.008 89.8 0.938 179.3
1100 0.952 176.9 0.226 35.8 0.009 93.4 0.940 178.2
RD07MVS1 S-PARAMETER DATA (@Vdd=12.5V, Id=750mA)
Freq.
S11
S21
S12
S22
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
100 0.883 -172.1 6.013 81.0 0.017 -5.3 0.748 -170.4
150 0.891 -174.1 3.914 72.8 0.016 -10.7 0.765 -171.4
175 0.894 -174.6 3.269 69.8 0.016 -13.1 0.769 -171.4
200 0.897 -175.0 2.798 67.2 0.015 -14.9 0.786 -171.3
250 0.906 -175.6 2.144 62.1 0.014 -18.3 0.822 -171.4
300 0.914 -176.0 1.697 56.9 0.012 -20.4 0.828 -171.6
350 0.920 -176.4 1.361 53.0 0.011 -21.6 0.848 -172.0
400 0.927 -177.0 1.134 49.9 0.010 -21.2 0.871 -172.9
450 0.932 -177.4 0.949 45.8 0.009 -21.8 0.876 -173.2
500 0.937 -177.8 0.800 44.2 0.007 -16.9 0.892 -173.7
520 0.938 -178.0 0.761 43.2 0.007 -16.0 0.898 -174.1
550 0.940 -178.3 0.697 41.1 0.006 -13.3 0.904 -174.6
600 0.944 -178.8 0.594 39.3 0.005 -7.2 0.906 -175.1
650 0.946 -179.1 0.527 38.2 0.004 4.5 0.917 -175.9
700 0.948 -179.5 0.464 36.1 0.004 17.4 0.924 -176.3
750 0.950 -179.9 0.412 35.5 0.004 28.0 0.922 -176.9
800 0.951 179.6 0.368 34.5 0.004 56.9 0.931 -177.8
850 0.953 179.2 0.336 33.6 0.004 66.4 0.934 -178.0
900 0.954 178.8 0.297 32.3 0.005 78.3 0.933 -178.3
950 0.954 178.4 0.276 33.8 0.006 87.4 0.939 -179.4
1000 0.954 178.0 0.254 31.1 0.006 90.9 0.941 -179.5
1050 0.952 177.5 0.226 32.2 0.007 94.7 0.940 -179.9
1100 0.954 177.0 0.219 32.0 0.008 98.0 0.943 178.9
RD07MVS1
MITSUBISHI ELECTRIC
7/8
REV.7 2 Apr. 2004
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
RD07MVS1 | Silicon MOSFET Power Transistor | Mitsubishi Electric |
RD07MVS1B | Silicon MOSFET Power Transistor | Mitsubishi Electric Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |