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부품번호 | IR01H420 기능 |
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기능 | (IR01H(D)xxx) HIGH VOLTAGE HALF BRIDGE | ||
제조업체 | International Rectifier | ||
로고 | |||
Data Sheet No. PD-6.075-G
IR01H(D)214 / IR01H(D)214-P2
IR01H(D)224 / IR01H(D)224-P2
IR01H(D)420 / IR01H(D)420-P2
HIGH VOLTAGE HALF BRIDGE
Features
• Output Power MOSFETs in half-bridge configuration
m• 500V rated breakdown voltage
• High side gate drive designed for bootstrap
ooperation
• Matched propagation delay for both channels
.c• Undervoltage lockout
• 5V Schmitt-triggered input logic
• Half-Bridge output in phase with HIN
U• Heatsink version (P2) with improved PD
t4Description
The IR01H(D)xxx is a high voltage, high speed half
ebridge. Proprietary HVIC and latch immune CMOS
etechnologies, along with the HEXFET power
MOSFET technology, enable ruggedized single
hpackage construction. The logic inputs are compat-
ible with standard CMOS or LSTTL outputs. The
front end features an independent high and low side
Sdriver in phase with the logic compatible input
tasignals. The output features two HEXFETs in a half-
bridge configuration with a high pulse current buffer
stage designed for minimum cross-conduction in the
ahalf bridge. Propagation delays for the high and low
side power MOSFETs are matched to simplify use.
Product Summary
VIN (max)
250V- 214/224
500V - 420
ton/off
trr
RDS(on)
130 & 90 ns
260 ns
2.0Ω - H214
1.1Ω - H224
3.0Ω - H420
PD(TA = 25oC)
2.0W
4.0W - P2
Packages
.DTypical Connection
wVIN
wVcc
w omHIN
.cL IN
heet4UCOM
HV DC Bus
D1
1 Vcc VB 6
2 HIN
VIN 9
3 L IN
VO 7
COM
4
NOTE: D1 is not required for
the HD type
TO
LOAD
www.DataS1
IR01H(D)214 / IR01H(D)214-P2
IR01H(D)224 / IR01H(D)224-P2
IR01H(D)420 / IR01H(D)420-P2
Dynamic Electrical Characteristics
VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. Switching time waveform definitions are shown in
figure 2.
Symbol
ton
toff
tr
tf
MT
trr
Qrr
Definition
Turn-On Propagation Delay (see note 2)
Turn-Off Propagation Delay (see note 2)
Turn-On Rise Time (see note 2)
Turn-Off Fall Time (see note 2)
Delay Matching, HS & LS Turn-On/Off
Reverse Recovery Time (MOSFET Body Diode)
Reverse Recovery Charge (MOSFET Body Diode)
Min.
—
—
—
—
—
—
—
Typ. Max. Units Test Conditions
130 200
Vs = 0V
90 200
Vs = 500V
80 120 ns
40 70
30 —
260 —
IF = 0.7A
0.7 — µC
di/dt = 100 A/us
Note 2: Switching times as specified and illustrated in figure 2 are referenced to the MOSFET gate input
voltage. This is shown as HO in figure 2.
Static Electrical Characteristics
VBIAS (VCC, VB) = 15V and TA = 25°C unless otherwise specified. The Input voltage and current levels are referenced to
COM.
Symbol
VCCUV+
VCCUV-
IQCC
IQBS
Ios
VIH
VIL
IIN+
IIN-
Rds(on)
VSD
Definition
VCC Supply Undervoltage Positive Going
Threshold
VCC Supply Undervoltage Negative Going
Threshold
Quiescent VCC Supply Current
Quiescent VBS Supply Current
Offset Supply Leakage Current
Logic “1” Input Voltage
Logic “0” Input Voltage
Logic “1” Input Bias Current
Logic “0” Input Bias Current
Static Drain-to-Source On-Resistance 214
224
420
Diode Forward Voltage
214/420
224
Min. Typ. Max. Units Test Conditions
8.8 9.3 9.8 V
7.5 8.2 8.6 VV
— 140 240 µA
— 20 50 µA
— — 50 µA VB = VS = 500V
2.7 — —
— — 0.8
— 20 40
— — 1.0
— 2.0 —
— 1.1 —
— 3.0 —
— 0.8 —
— 0.85 —
V VCC = 10V to 20V
VV VVCCCC== 1100VV ttoo2200VV
µA
Ω
o
Id=850mA/TJ=150 C
Ω Id=1.1A/TJ=150oC
Ω Id=700mA/TJ=150oC
V Id=700mA/TJ=150oC
o
Id=1.1A/TJ=150 C
4
4페이지 IR01H(D)214 / IR01H(D)214-P2
IR01H(D)224 / IR01H(D)224-P2
IR01H(D)420 / IR01H(D)420-P2
16.89 (.665)
16.63 (.655)
3.18 (.125)
2.92 (.115)
NOTES:
1. Dimensioning & Tolerancing per
ANSI Y14.5M-1982
2. Controlling dimension: Inch
3. Dimensions are shown in millimeters
(inches)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2, Tel: (905) 473 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice.
5/98
7
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부품번호 | 상세설명 및 기능 | 제조사 |
IR01H420 | (IR01H(D)xxx) HIGH VOLTAGE HALF BRIDGE | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |