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PDF MPZ5-180 Data sheet ( Hoja de datos )

Número de pieza MPZ5-180
Descripción (MPZ5-xx Series) High Power Transient Voltage Suppressor and Zener
Fabricantes Microsemi Corporation 
Logotipo Microsemi Corporation Logotipo



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No Preview Available ! MPZ5-180 Hoja de datos, Descripción, Manual

SCOTTSDALE DIVISION
MPZ5-16, MPZ5-32, & MPZ5-180 Series
High Power Transient Voltage Suppressor
and Zener
DESCRIPTION
This high power Transient Voltage Suppressor and Zener is designed for
applications requiring protection of voltage-sensitive electronic devices
that may be damaged by high power or high energy voltage transients
including lightning per IEC61000-4-5 and classes 1-4 with various source
impedances described herein. Individual cells are matched to ensure
current-sharing under high current pulse conditions and for continuous
operation as a Zener when required.
APPEARANCE
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Peak surge power capacity given from 0.1 ms to 10
seconds.
Low clamping factor
Negligible power loss
Small size and weight for 350 W dc rating
Low thermal resistance junction to base plate
Working Standoff Voltages 14 to 165 Volts
Following variations are also available:
- Non-Standard Voltages
- Higher Power Capacity
- Other Package Configurations
High Power Voltage Regulation
High Power Transient Voltage Protection from
Lightning per IEC61000-4-5 for class 1,2,3,4, and 5
with source impedance of 42 Ohms
High Power Transient Voltage Protection from
Lightning per IEC61000-4-5 for class 1,2,3, and 4
with source impedance of 12 Ohms for MPZ5-16
and MPZ5-32 device types
High Power Transient Voltage Protection from
Lightning per IEC61000-4-5 for class 2 and 3 with
source impedance of 2 Ohms for MPZ5-16 and
MPZ-32 as well as class 4 for MPZ5-16
MAXIMUM RATINGS
Transient Peak Pulse Power: 40 kW at 0.1 ms and
8 kW at 1.0 ms (sq. wave) or 12 kW @ 10/1000 us
DC Power Dissipation: 350 Watts @ TC = 25oC
(Derate 2.33 W/oC above 25oC)
Operating junction & storage temperature range:
-65oC to +175oC.
MECHANICAL AND PACKAGING
Robust copper heat-sink mounting plates and cells
Finish: Nickel-Solder Plated
Polarity: Anode-to-Case is standard. Cathode-to-
Case available upon request.
Weight: 61 grams (approximate)
ELECTRICAL CHARACTERISTICS (TA = 25oC, VF = 1.5 V max @ 10 A for all types)
Rated Standoff
Voltage
(Note 1)
Type
MPZ5-16A
MPZ5-16B
MPZ5-32A
MPZ5-32B
MPZ5-32C
MPZ5-180A
MPZ5-180B
MPZ5-180C
VWM
Vdc
14
14
28
28
28
165
165
165
VWM
Vrms
10
10
20
20
20
117
117
117
Maximum Device
Clamping Factor
CF= VZ @ IZ(pulse)
Vz @ Izt
(Note 2)
1.25
1.25
1.25
1.25
1.25
1.14
1.14
1.14
Minimum
Zener Voltage
VZ (min) @ IZT
Vdc Adc
16 0.4
16 0.4
32 0.2
32 0.2
32 0.2
180 0.03
180 0.03
180 0.03
Maximum Zener
Typical
Voltage
Maximum
Pulse Width = 1.0 ms Standby Current
Capacitance
C (typ)
VZ (max) @ IZ (pulse)
ID
@ VWM
@ VWM
µF
Vdc Adc
µAdc
24 200
50
0.025
20 200
50
0.025
50 100
50
0.011
45 100
50
0.011
www.DataSheet4U.com40 100
250 20
50
50
0.011
0.0012
225 20
50
0.0012
205 20
50
0.0012
NOTE 1: Rated Standoff Voltage (VWM) is defined as normal input voltage to device for non-operating condition. If non-sinusoidal wave or dc
input is present, the peak operating voltage input values for VWM should be used to select device type.
NOTE 2: The maximum device clamping factor CF is a ratio of VZ measured at IZ (pulse) given in the Electrical Characteristics Table divided by VZ
measured at IZT under steady state conditions. This value guarantees the sharpness of the voltage breakdown of individual devices.
Figure 2 demonstrates the typical sharpness of the breakdown, and indicates the voltage regulation over a wide range of currents where
the change in voltage êVZ is as follows: êVZ = VZ @ IZ (pulse) – VZ @ IZT
Copyright © 2003
03-14-2003 REV 0
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
www.DataSheet4U.com
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