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PDF STE45NK80ZD Data sheet ( Hoja de datos )

Número de pieza STE45NK80ZD
Descripción N-CHANNEL Power MOSFET
Fabricantes ST Microelectronics　
Logotipo ST Microelectronics Logotipo



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No Preview Available ! STE45NK80ZD Hoja de datos, Descripción, Manual

STE45NK80ZD
N-CHANNEL 800V - 0.11Ω - 45 A ISOTOP
Super FREDMesh™ MOSFET
Table 1: General Features
TYPE
VDSS RDS(on)
ID
Pw
STE45NK80ZD 800 V < 0.13 Ω 45 A 600 W
s TYPICAL RDS(on) = 0.11 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperFREDMesh™ series is obtained
through an extreme optimization of ST’s well es-
tablished strip-based PowerMESH™ layout. In ad-
dition to pushing on-resistance significantly down,
special care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary MD-
mesh™ products.
Figure 1: Package
ISOTOP
Figure 2: Internal Schematic Diagram
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s IDEAL FOR WELDING EQUIPMENT
Table 2: Order Codes
SALES TYPE
STE45NK80ZD
MARKING
E45NK80ZD
PACKAGE
ISOTOP
PACKAGING
TUBE
April 2005
www.DataSheet4U.com
Rev. 6
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STE45NK80ZD pdf
STE45NK80ZD
Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 13: Normalized On Resistance vs Tem-
perature
Figure 11: Source-Drain Diode Forward Char-
acteristics
Figure 14: Normalized BVdss vs Temperature
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