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PDF IRFZ34N Data sheet ( Hoja de datos )
| Número de pieza | IRFZ34N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Ease of Paralleling
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
G
www.DataSheet4U.com
PD -9.1276C
IRFZ34N
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.040Ω
ID = 29A
S
TO-220AB
Max.
29
20
100
68
0.45
± 20
65
16
6.8
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Min.
––––
––––
––––
Typ.
––––
0.50
––––
Max.
2.2
––––
62
Units
°C/W
8/25/97
1 page  
IRFZ34N
30
25
20
15
10
5
0
25 50 75 100 125 150 175
TC, Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+
-
VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
1
0.20
0.10
0.05
0.1 0.02
0.01
0.01
0.00001
SINGLEPULSE
(THERMALRESPONSE)
P DM
t1
t2
Notes:
1. Duty factor D = t 1/ t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
t1, Rectangular Pulse Duration (sec)
0.01
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFZ34N.PDF ] | |
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