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PDF MRF587 Data sheet ( Hoja de datos )

Número de pieza MRF587
Descripción NPN Silicon High Frequency Transistor
Fabricantes Motorola Semiconductors 
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
High-Frequency Transistor
. . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband
amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.
Low Noise Figure —
NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA
High Power Gain —
GU(max) = 16.5 dB (Typ) @ f = 500 MHz
Ion Implanted
All Gold Metal System
High fT — 5.5 GHz
Low Intermodulation Distortion:
TB3 = – 70 dB
DIN = 125 dB µV
Nichrome Emitter Ballast Resistors
Order this document
by MRF587/D
MRF587
NF = 3.0 dB @ 0.5 GHz
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 50°C
Derate above TC = 50°C
Storage Temperature Range
Junction Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Value
17
34
2.5
200
5.0
33
– 65 to +150
200
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/°C
°C
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
V(BR)CEO
Collector–Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
V(BR)CBO
Emitter–Base Breakdown Voltage
(IC = 0, IE = 0.1 mAdc)
V(BR)EBO
Collector Cutoff Current
(VCB = 10 Vdc, IE = 0)
ICBO
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 50 mAdc, VCE = 5.0 Vdc)
hFE
NOTE:
1. 300 µs pulse on Tektronix 576 or equivalent.
Min
17
34
2.5
50
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
www.DataSheet4U.com
CASE 244A–01, STYLE 1
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
— 50 µAdc
— 200 —
(continued)
MRF587
1

1 page




MRF587 pdf
+ j50
+ j25
+ j100
VCE = 15 V IC = 90 mA
90°
120° f = 0.1 GHz
60°
+ j150
+ j10 + j250
0
S11
1
10 0.8
0.6
25
50
0.4 0.4
0.2 0.6 0.2
– j10
f = 0.1 GHz
0.8
1
100 150 250 500
f = 0.1 GHz
+ j500
– j500
– j250
S22 – j150
– j25 – j100
– j50
Figure 13. Input/Output Reflection
Coefficient versus Frequency (GHz)
S21
150° 0.2
30°
0.8
180° 25 20 15 10
0.4
0.6
1
5
1
0.6
0.4
f = 0.1 GHz
0.1 0.2 0.3
S12
0.4
0.5
0°
–150°
– 30°
–120°
– 90°
– 60°
Figure 14. Forward/Reverse Transmission
Coefficients versus Frequency (GHz)
VCE
(Volts)
5.0
10
IC
(mA)
30
60
90
30
60
90
f
(MHz)
100
200
400
600
800
1000
100
200
400
600
800
1000
100
200
400
600
800
1000
100
200
400
600
800
1000
100
200
400
600
800
1000
100
200
400
600
800
1000
S11
|S11|
φ
0.56 – 131
0.58 – 159
0.60 – 178
0.64 170
0.67 162
0.70 155
0.53 – 141
0.56 – 164
0.59 178
0.63 169
0.66 161
0.69 155
0.52 – 145
0.56 – 166
0.59 177
0.63 168
0.66 161
0.69 155
0.53 – 122
0.53 – 153
0.55 175
0.59 173
0.62 165
0.65 158
0.49 – 132
0.51 – 158
0.53 – 178
0.58 171
0.60 164
0.63 157
0.48 – 135
0.50 – 160
0.53 – 179
0.57 171
0.60 164
0.63 157
S21
|S21|
16.45
9.42
5.00
3.61
2.92
2.55
φ
113
98
86
76
67
58
17.89
10.05
5.31
3.82
3.09
2.67
110
97
85
76
67
58
18.26
10.20
5.38
3.86
3.12
2.70
109
96
85
76
67
58
18.36
10.63
5.71
4.16
3.37
2.95
115
100
87
78
68
59
20.19
11.54
6.12
4.43
3.58
3.12
112
99
87
78
68
60
20.82
11.77
6.22
4.50
3.64
3.18
111
98
86
78
68
60
S12
|S12|
0.04
0.06
0.08
0.11
0.14
0.17
0.04
0.05
0.09
0.12
0.15
0.18
0.04
0.05
0.09
0.12
0.15
0.19
0.04
0.05
0.08
0.10
0.13
0.15
0.03
0.05
0.08
0.11
0.14
0.16
0.03
0.05
0.08
0.11
0.14
0.17
φ
45
49
55
56
55
54
50
55
60
59
57
55
52
57
62
60
58
55
48
51
57
58
57
55
51
57
61
60
59
57
53
59
63
62
59
57
Table 1. Common–Emitter S–Parameters
S22
|S22|
φ
0.49 – 91
0.38 – 116
0.35 – 132
0.38 – 138
0.41 – 144
0.44 – 152
0.47 – 102
0.39 – 126
0.38 – 141
0.40 – 146
0.44 – 153
0.47 – 160
0.47 – 106
0.39 – 130
0.39 – 144
0.41 – 149
0.45 – 155
0.48 – 162
0.50 – 75
0.36 – 96
0.33 – 112
0.35 – 119
0.39 – 127
0.42 – 136
0.46 – 85
0.35 – 107
0.33 – 123
0.36 – 129
0.40 – 136
0.44 – 144
0.45 – 88
0.34 – 111
0.33 – 126
0.36 – 131
0.41 – 139
0.44 – 147
(continued)
MOTOROLA RF DEVICE DATA
MRF587
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