|
|
|
부품번호 | C30642 기능 |
|
|
기능 | (C306xx) PIN-TYPE PHOTODIODE | ||
제조업체 | Perkin Elmer Optoelectronics | ||
로고 | |||
C30619, C30641, C30642, C30665
Figure 9. Package D15: TO-5 with Glass Window.
Ordering Guide
C30 # # # L - X X X
TE-Cooler Option:
Window Option:
Chip Type:
TC:
DTC:
1-stage TE cooler
2-stage TE cooler
(Not yet available for C30665)
E: Silicon
G: Glass
(See below for availability)
619: 0.5mm diameter
641: 1.0mm diameter
642: 2.0mm diameter
665: 3.0mm diameter
Device Package Availability
Window Window
Package Type
Option Type C30619 C30641 C30642 C30665
E Silicon D21 D21 - -
G Glass D14 D14 D15 D15
Note 1: Special Order
©2000 PerkinElmer, Inc.
All rights reserved.
07w0w0 w.DataSheet4U.com
www.DataSheet4U.com
For more information e-mail us at [email protected] or visit our web site at www.perkinelmer.com/opto
All values are nominal; specifications subject to change without notice.
is a registered trademark of PerkinElmer, Inc.
PerkinElmer Optoelectronics
22001 Dumberry Road,
wwwV.aDuadtraeSuihl,eQeuté4bUe.ccom
Canada J7V 8P7
Phone: (450) 424-3300
Fax: (450) 424-3411
C30619, C30641, C30642, C30665
Package Options
TE-Cooled Devices: Large-area detectors are available
mounted on a 1-stage or 2-stage thermoelectric (TE) cooler.
Cooling increases shunt resistance (see Figure 2) thereby
reducing noise for increased sensitivity. Typical detector
temperature is -10°C with a 1-stage TE cooler or -35°C
using a 2-stage cooler. A TE-cooler option can be specified
by adding the extension -TC (1-stage cooler) or -DTC (2-
stage cooler) to the standard part number (see ordering
guide). More information is available from the "TC-Series
Cooled Photodiodes" datasheet from PerkinElmer
Optoelectronics Canada.
Detector and Pre-Amplifier: Large-area InGaAs detectors are
also available integrated with a preamplifier and TE-cooler. The
HTE-series features large-area InGaAs detectors with a high
gain hybrid transimpedence amplifier mounted on a 2-stage TE
cooler. TE-cooling maximizes sensitivity and stabilizes op-amp
offset and output characteristics. This provides an easy-to-use
high sensitivity detector platform optimized for good temperature
stability over a wide operating temperature range. More
information is available from the HTE-series datasheet. The
standard HTE-2642 incorporates a C30642E chip.
Specifications (at VR = VOP (typical), 22°C)
Parameter
C30619
Min Typ Max
Active Diameter
Responsivity At 850 nm
0.10
At 1300 nm
0.80
At 1550 nm
0.85
Shunt Resistance (VR = 10 mV) 1
Dark Current
10
Spectral Noise Current (10 kHz, 1.0 Hz)
Capacitance At VR = 0V
At VR = VOP
Bandwidth (-3 dB, RL = 50Ω)
Linearity 2
Available package types
0.5
0.20
0.90
0.95
250
1
0.02
20
8
350
> +13
D2, D14
20
0.10
25
10
C30641
Min Typ Max
1.0
0.10 0.20
0.80 0.90
0.85 0.95
5 50
5 50
0.04 0.15
100 125
40 50
75
> +13
D2, D14
Units
mm
A/W
A/W
A/W
MΩ
nA
pA/√Hz
pF
pF
MHz
dBm
-
Operating Ratings
Parameter
Operating Voltage
Breakdown Voltage
Maximum Forward Current
Maximum Photocurrent
Power Dissipation
Storage Temperature
Operating Temperature
C30619
Min Typ Max
0 5 10
20 80
10
100
100
-60 125
-40 85
C30641
Min Typ Max
025
20 80
10
100
100
-80 125
-40 85
Units
V
V
mA
mA
mW
°C
°C
Note 1. Selected higher shunt resistance devices are available to special order.
Note 2. Maximum optical power level for < ±0.04 dB (±1%) responsivity variation under 1300 nm CW illumination, at VR = VOP (typ).
4페이지 | |||
구 성 | 총 5 페이지수 | ||
다운로드 | [ C30642.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
C30641 | (C306xx) Large-Area InGaAs Photodiodes | PerkinElmer Optoelectronics |
C30641 | (C306xx) PIN-TYPE PHOTODIODE | Perkin Elmer Optoelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |