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C30641 데이터시트 PDF




PerkinElmer Optoelectronics에서 제조한 전자 부품 C30641은 전자 산업 및 응용 분야에서
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부품번호 C30641 기능
기능 (C306xx) Large-Area InGaAs Photodiodes
제조업체 PerkinElmer Optoelectronics
로고 PerkinElmer Optoelectronics 로고


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C30641 데이터시트, 핀배열, 회로
Description
The PerkinElmer family of large-area InGaAs
PIN photodiodes provide high responsivity
from 800 nm to 1700 nm for applications
including optical power meters, fiber optic test
equipment, near-IR spectoscopy and
instrumentation. All devices are planar
passivated and feature low capacitance for
extended bandwidth, and high shunt
resistance for maximum sensitivity. Typical
devices feature <1% non-linearity to optical
powers >+13 dBm (20 mW), and uniformity
within ±2% across the detector active area.
Typical responsivity of 0.2 A/W at 850 nm for
our large-area InGaAs devices allows use of
a single detector in fiber optic test
instrumentation designed to operate at 850,
1300, and 1550 nm.
Large-Area InGaAs
Photodiodes
C30619, C30641, C30642, C30665
Features
Devices are available with active areas from
0.5 mm to 3.0 mm in TO-type packages or on
thermoelectric coolers for increased sensitivity
(see below). Photodiodes can also be
mounted on customized ceramic sub-mounts
to suit specific application requirements.
PerkinElmer Optoelectronics Canada is
qualified to ISO-9001 and operates to MIL-Q-
9858A and AQAP-1 quality standards. All
devices undergo extended life-test and
periodic process qualification programs to
assure high reliability. In addition, all
production devices are sourced from a
qualified wafer, screened with a 16 hour,
200°C burn-in at -10V bias (C30619 and
C30641) or -5V (C30642 and C30665), and
tested to meet responsivity, spectral noise,
capacitance, shunt resistance and dark
current specifications.
• 0.5, 1.0, 2.0, and 3.0 mm diameters
• High responsivity from 850 nm to 1550 nm
• High shunt resistance, low dark current
• TE-cooled package options
• Low capacitance for fast response times
Applications
• Power meters
• Fiber identifiers
• Laser burn-in racks
• Near infrared instrumentation
• F.T.I.R. spectroscopy
EVERYTHING
IN A
NEW
LIGHT.
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C30641 pdf, 반도체, 판매, 대치품
C30619, C30641, C30642, C30665
Figure 3. Typical Capacitance vs. Operating Voltage.
Wavelength
(nm)
850
1060
1300
1550
1650
Temperature
Coefficient1
(%/°C)
-0.121
0.039
0.012
0.009
0.085
1.287
(20°C to 85°C)
(-40°C to 20°C)
Note1: Measured from -40°C to +85°C except
1650nm, as indicated.
Figure 5. Typical Responsivity Temperature Coefficients.
Figure 4. Typical Dark Current vs. Operating Voltage.
Figure 6. Typical Responsivity Scan of a 1mm Photodiode.
Figure 7. Package D2: TO-18 Low Profile with Silicon Window. To special order.
Figure 8. Package D-14: TO-18 with Glass Window.

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관련 데이터시트

부품번호상세설명 및 기능제조사
C30641

(C306xx) Large-Area InGaAs Photodiodes

PerkinElmer Optoelectronics
PerkinElmer Optoelectronics
C30641

(C306xx) PIN-TYPE PHOTODIODE

Perkin Elmer Optoelectronics
Perkin Elmer Optoelectronics

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