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부품번호 | C30641 기능 |
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기능 | (C306xx) Large-Area InGaAs Photodiodes | ||
제조업체 | PerkinElmer Optoelectronics | ||
로고 | |||
전체 5 페이지수
Description
The PerkinElmer family of large-area InGaAs
PIN photodiodes provide high responsivity
from 800 nm to 1700 nm for applications
including optical power meters, fiber optic test
equipment, near-IR spectoscopy and
instrumentation. All devices are planar
passivated and feature low capacitance for
extended bandwidth, and high shunt
resistance for maximum sensitivity. Typical
devices feature <1% non-linearity to optical
powers >+13 dBm (20 mW), and uniformity
within ±2% across the detector active area.
Typical responsivity of 0.2 A/W at 850 nm for
our large-area InGaAs devices allows use of
a single detector in fiber optic test
instrumentation designed to operate at 850,
1300, and 1550 nm.
Large-Area InGaAs
Photodiodes
C30619, C30641, C30642, C30665
Features
Devices are available with active areas from
0.5 mm to 3.0 mm in TO-type packages or on
thermoelectric coolers for increased sensitivity
(see below). Photodiodes can also be
mounted on customized ceramic sub-mounts
to suit specific application requirements.
PerkinElmer Optoelectronics Canada is
qualified to ISO-9001 and operates to MIL-Q-
9858A and AQAP-1 quality standards. All
devices undergo extended life-test and
periodic process qualification programs to
assure high reliability. In addition, all
production devices are sourced from a
qualified wafer, screened with a 16 hour,
200°C burn-in at -10V bias (C30619 and
C30641) or -5V (C30642 and C30665), and
tested to meet responsivity, spectral noise,
capacitance, shunt resistance and dark
current specifications.
• 0.5, 1.0, 2.0, and 3.0 mm diameters
• High responsivity from 850 nm to 1550 nm
• High shunt resistance, low dark current
• TE-cooled package options
• Low capacitance for fast response times
Applications
• Power meters
• Fiber identifiers
• Laser burn-in racks
• Near infrared instrumentation
• F.T.I.R. spectroscopy
EVERYTHING
IN A
NEW
LIGHT.
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C30619, C30641, C30642, C30665
Figure 3. Typical Capacitance vs. Operating Voltage.
Wavelength
(nm)
850
1060
1300
1550
1650
Temperature
Coefficient1
(%/°C)
-0.121
0.039
0.012
0.009
0.085
1.287
(20°C to 85°C)
(-40°C to 20°C)
Note1: Measured from -40°C to +85°C except
1650nm, as indicated.
Figure 5. Typical Responsivity Temperature Coefficients.
Figure 4. Typical Dark Current vs. Operating Voltage.
Figure 6. Typical Responsivity Scan of a 1mm Photodiode.
Figure 7. Package D2: TO-18 Low Profile with Silicon Window. To special order.
Figure 8. Package D-14: TO-18 with Glass Window.
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
C30641 | (C306xx) Large-Area InGaAs Photodiodes | PerkinElmer Optoelectronics |
C30641 | (C306xx) PIN-TYPE PHOTODIODE | Perkin Elmer Optoelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |