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6DI30Z-120 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 6DI30Z-120
기능 (6DIxxx-050) High Power Transistor Modules
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6DI30Z-120 데이터시트, 핀배열, 회로
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Power Devices
Power Transistor Modules
600 volts class high hFE power transistor modules
Device type
2DI30M-050
2DI50M-050
2DI75M-050
2DI100M-050
2DI100MA-050
2DI150M-050
2DI150MA-050
2DI200M-050
1DI300M-050
1DI400M-050
VCBO
Volts
600
600
600
600
600
600
600
600
600
600
VCEO
(sus)
Volts
450
450
450
450
450
450
450
450
450
450
IC
Cont.
Amps.
30
50
75
100
100
150
150
200
300
400
PC
Watts
250
310
350
620
620
690
690
800
1380
1500
hFE(Tj=125˚C)
(Min.) IC
Amps.
750 30
750 50
750 75
1000 100
1000 100
1500 150
1500 150
2000 200
3000 300
2000 400
VCE
Volts
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
Switching time(Max.)
ton tstg tf
µsec.
µsec. µsec.
3.0 8.0 3.0
3.0 8.0 3.0
3.0 8.0 3.0
3.0 8.0 3.0
3.0 8.0 2.0
3.0 8.0 3.0
3.0 8.0 2.0
3.0 8.0 2.0
5.5 8.0 2.0
8.5 8.0 2.0
Package
M208
M208
M208
M205
M203
M205
M203
M210
M109
M109
Net mass
Grams
175
175
175
340
450
340
450
470
470
470
600 volts class 6 in one-package high hFE power transistor modules
Device type
6DI30M-050
6DI30MA-050
6DI50M-050
6DI50MA-050
6DI75M-050
6DI75MA-050
6DI100M-050
VCBO
Volts
600
600
600
600
600
600
600
VCEO
(sus)
Volts
450
450
450
450
450
450
450
IC
Cont.
Amps.
30
30
50
50
75
75
100
PC
Watts
hFE(Tj=125˚C)
(Min.) IC
Amps.
VCE
Volts
200
750 30
2.5
150
750 30
2.5
310
750 50
2.5
230
750 50
2.5
350 DataS7h5e0et4U7.5com 2.5
350
750 75
2.5
400
1000 100
2.5
Switching time(Max.)
ton tstg tf
µsec. µsec. µsec.
3.0 8.0 3.0
3.0 8.0 3.0
3.0 8.0 3.0
3.0 8.0 3.0
3.0 8.0 3.0
3.0 8.0 3.0
4.0 8.0 3.0
Package
M607
M603
M609
M603
M609
M603
M610
Net mass
Grams
235
450
630
450
630
450
DataShee
750
600 volts class high hFE power transistor modules for motor braking in inveter using
Device type
1DI30MA-050
1DI50MA-050
1DI200MA-050
VCBO
Volts
600
600
600
VCEO
(sus)
Volts
450
450
450
IC
Cont.
Amps.
30
50
200
PC
Watts
200
310
1000
hFE(Tj=125˚C)
(Min.) IC
Amps.
750 30
750 50
2000 200
VCE
Volts
2.5
2.5
2.5
Switching time(Max.)
ton tstg tf
µsec.
µsec. µsec.
3.0 8.0 3.0
3.0 8.0 3.0
3.0 8.0 3.0
Package
M102
M102
M104
Net mass
Grams
100
100
450
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13




6DI30Z-120 pdf, 반도체, 판매, 대치품
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Power Devices
Power Transistor Modules
Power transistor modules with zener diode for snubber circuit
Device type
1DI300MN-050
1DI400MN-050
1DI400MP-050
1DI300MN-120
1DI300MP-120
1DI400MN-120
1DI400MP-120
1DI200ZN-120
1DI200ZP-120
1DI300ZN-120
1DI300ZP-120
IVCEX(sus)
VCBO
Volts
600
600
600
1200
1200
1200
1200
1200
1200
1200
1200
VCEO
(sus)
Volts
450
450
450
900
900
900
900
1200 I
1200 I
1200 I
1200 I
IC
Cont.
Amps.
300
400
400
300
300
400
400
200
200
300
300
PC
Watts
1380
1500
1500
2000
2000
3000
3000
1400
1400
2000
2000
hFE(Tj=125˚C)
(Min.) IC
Amps.
3000 300
2000 400
2000 400
1500 300
1500 300
2000 400
2000 400
100 200
100 200
100 300
100 300
VCE
Volts
2.5
2.5
2.5
4.0
4.0
4.0
4.0
5.0
5.0
5.0
5.0
Switching time(Max.)
ton tstg tf
µsec.
µsec. µsec.
5.5 8.0 2.0
8.5 8.0 2.0
8.5 8.0 2.0
7.0 15.0 3.0
7.0 15.0 3.0
3.0 15.0 3.0
3.0 15.0 3.0
3.0 15.0 2.0
3.0 15.0 2.0
3.0 15.0 2.0
3.0 15.0 2.0
Package
M115
M115
M114
M118
M117
M118
M117
M115
M114
M115
M114
Net mass
Grams
430
430
430
430
430
430
430
430
430
430
430
Single in-line package / 6 in one-package power transistor modules
Device type
VCBO
Volts
6DI10MS-050
600
6DI15S-050
600
et4U.co66mDDII1250MMSS--005500
600
600
I 6DI15S-050: Tj= 25˚C
VCEO
(sus)
Volts
450
450
450
450
IC
Cont.
Amps.
10
15
15
20
PC
Watts
50
60
60
80
hFE(Tj=125˚C)I
(Min.) IC
Amps.
VCE
Volts
100 10
2.0
100 15
5.0
1D5a0 taSh1e5 et4U.c2o.5m
200 20
2.5
Switching time(Max.)
ton tstg tf
µsec. µsec. µsec.
2.0 8.0 2.0
1.0 12.0 2.0
2.0 8.0 2.0
2.0 8.0 2.0
Package
M615
M614
M615
M615
Net mass
Grams
65
40
65
65
DataShee
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6DI30Z-120

(6DIxxx-050) High Power Transistor Modules

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