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부품번호 | SE5455 기능 |
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기능 | GaAs Infrared Emitting Diode | ||
제조업체 | Honeywell | ||
로고 | |||
전체 4 페이지수
SE3455/5455
GaAs Infrared Emitting Diode
FEATURES
• TO-46 metal can package
• Choice of flat window or lensed package
• 90¡ or 20¡ (nominal) beam angle option
• 935 nm wavelength
• Wide operating temperature range
(- 55¡C to +125¡C)
• Ideal for high pulsed current applications
• Mechanically and spectrally matched to
SD3421/5421 photodiode,
SD3443/5443/5491phototransistor,
SD3410/5410 photodarlington and SD5600
series Schmitt trigger
DESCRIPTION
The SE3455/5455 series consists of a gallium arsenide
infrared emitting diode mounted in a TO-46 metal can
package. The SE3455 series has flat window cans
providing a wide beam angle, while the SE5455 series
has glass lensed cans providing a narrow beam angle.
These devices are constructed with dual bond wires
suitable for pulsed current applications. The TO-46
packages offer high power dissipation capability and are
ideally suited for operation in hostile environments.
INFRA-83.TIF
OUTLINE DIMENSIONS in inches (mm)
Tolerance 3 plc decimals ±0.005(0.12)
2 plc decimals ±0.020(0.51)
SE3455
.219 (5.56) DIA.
.208 (5.28)
.188 (4.77) DIA.
.178 (4.52)
.500
(12.70)
MIN.
45°
.046(1.17)
.036(.91)
.100(2.54)DIA
1 NOM
.160 (4.06) DIA.
.137 (3.48)
.048(1.22)
2
.015
(0.36)
.153 (3.89)
.140 (3.56)
.028(.71)
.018
DIA.
(.460)
LEADS:
1. CATHODE (TAB)
2. ANODE (CASE)
DIM_005a.ds4
SE5455
.219 (5.56) DIA.
.208 (5.28)
.188 (4.77) DIA.
.178 (4.52)
.500
(12.70)
MIN.
45°
.046(1.17)
.036(.91)
.100(2.54)DIA
1 NOM
.160 (4.06) DIA.
.137 (3.48)
.247 (6.27)
.224 (5.89)
DIM_005b.ds4
.015
(0.36)
.200
5.08
.048(1.22)
.028(.71)
2
.018 DIA.
(.460)
LEADS:
1. CATHODE (TAB)
2. ANODE (CASE)
h Honeywell reserves the right to make
28 changes in order to improve design and
supply the best products possible.
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
SE3455/5455
GaAs Infrared Emitting Diode
Fig. 7 Coupling Characteristics
SE3455 with SD3443
1.0
0.8
0.6
0.4
0.2
gra_021.ds4
0.0
0.0 0.2 0.4 0.6 0.8 1.0
Window-to-window distance - inches
Fig. 9 Radiant Intensity vs
Case Temperature
gra_022.ds4
5.0 Normalized to
4.0 IF = 100 mA
3.0
2.0
TA = 25 °C
1.0
0.5
0.4
0.3
0.2
0.1
-75 -50 -25 0 25 50 75 100 125
Case temperature - °C
All Performance Curves Show Typical Values
Fig. 8 Coupling Characteristics
SE5455 with SD5443
1.0
gra_024.ds4
0.8
0.6
0.4
0.2
0.0
0
12 345678
Lens-to-lens distance - inches
9
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
31
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
SE5455 | GaAs Infrared Emitting Diode | Honeywell |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |