G4BC20UD Datasheet PDF - International Rectifier
| Part Number | G4BC20UD | |
| Description | IRG4BC20UD | |
| Manufacturers | International Rectifier | |
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PD 91449B
IRG4BC20UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
C
VCES = 600V
www.DataSheet4U.com kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
G
VCE(on) typ. = 1.85V
Generation 3
• IGBT co-packaged with HEXFRED ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
E
n-channel
@VGE = 15V, IC = 6.5A
bridge configurations
• Industry standard TO-220AB package
Benefits
• Generation -4 IGBTs offer highest efficiencies
available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs. Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
TO-220AB
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
13
6.5
52
52
7.0
52
± 20
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
-----
------
Typ.
------
------
0.50
-----
2 (0.07)
Max.
2.1
3.5
------
80
------
Units
°C/W
g (oz)
www.irf.com
1
3/21/2000
|
| |
 
1000
800
www.DataSheet4U.com
600
400
200
C ie s
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SH OR TE D
C res = C gc
C oes = C ce + C gc
Coes
C re s
0A
1 10 100
VCE, Collector-to-Em itter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4BC20UD
20
VCE = 400V
IC = 6.5A
16
12
8
4
0A
0 5 10 15 20 25 30
Qg , Total G ate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.32
VCC = 480V
VGE = 15V
TJ = 25°C
I C = 6.5A
0.31
0.30
0.29
0
10 20 30 40 50
R G , G ate R e sista nce ( Ω)
A
60
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
10
RG = 50 Ω
V GE = 15V
V CC = 480V
IC = 1 3 A
1
IC = 6.5A
IC = 3.3A
0.1 A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , J u n ctio n T e m p e ra tu re (°C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
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| Information | Total 10 Pages | |
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