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Datasheet P3NB90FP-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
P3N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | P3N60FI | MTP3N60FI MTP3N60 MTP3N60FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE MTP3N60 MTP3N60FI
s s s s s
V DSS 600 V 600 V
R DS( on) < 2.5 Ω < 2.5 Ω
ID 3.9 A 2.5 A
TYPICAL RDS(on) = 2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APP  ETC data | | |
| 2 | P3N90FI | STP3N90FI ST Microelectronics data | | |
| 3 | P3NA50 | STP3NA50 STP3NA50 STP3NA50FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE
STP3NA50 STP3NA50FI
VDSS
500 V 500 V
RDS(on)
<3Ω <3Ω
ID
3.3 A 2.3 A
s TYPICAL RDS(on) = 2.4 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW INTRINSIC  STMicroelectronics data | | |
| 4 | P3NA60 | STP3NA60 STP3NA60 STP3NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE
STP3NA60 STP3NA60FI
VDSS
600 V 600 V
RDS(on)
<4Ω <4Ω
ID
2.9 A 2.1 A
s TYPICAL RDS(on) = 3.3 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW INTRINSIC STMicroelectronics data | | |
| 5 | P3NA80FI | STP3NA80FI
STP3NA80 STP3NA80FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STP3NA80 STP3NA80FI
s s s s s s s
V DSS 800 V 800 V
R DS( on) < 4.5 Ω < 4.5 Ω
ID 3.1 A 2A
TYPICAL RDS(on) = 3.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALA STMicroelectronics data | | |
| 6 | P3NA90FI | STP3NA90FI STP3NA90 STP3NA90FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE
ST P3NA 90 ST P3NA 90FI
VDSS
900 V 900 V
RDS(o n)
< 5.3 Ω < 5.3 Ω
ID
3A 1.9 A
s TYPICAL RDS(on) = 4.4 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DA STMicroelectronics data | | |
| 7 | P3NB60FP | STP3NB60 m o .c U 4 STP3NB60 t e STP3NB60FP e h S N - CHANNEL ENHANCEMENT MODE a t PowerMESH™ MOSFET a .D w w w
TYPE V DSS R DS(on) ID STP3NB60 STP3NB60FP 600 V 600 V <3.6 Ω < 3.6 Ω 3.3 A 2.2 A
s s s s s
TYPICAL RDS(on) = 3.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC ST Microelectronics data | |
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