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Datasheet BTW68 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BTW68 | 50A SCRs BTW67 and BTW69 Series
STANDARD
50A SCRs
MAIN FEATURES:
Symbol IT(RMS) V DRM/VRRM IGT Value 50 600 to 1200 80 Unit A V mA
DESCRIPTION Available in high power packages, the BTW67 / BTW69 Series is suitable in applications where power handling and power dissipation are critical, such as solid state |  ST Microelectronics | data |
| 2 | BTW68 | 30A SCRs BTW68
30 A SCRs
Features
■ On-state rms current: 30 A ■ Blocking voltage: up to 1200 V ■ Gate current: 50 mA ■ UL 2500 V insulation (file ref E81734)
Description
Available in a high power insulated package, the BTW68 series is suitable for applications where power handling and power dissipa | ST Microelectronics | data |
| 3 | BTW68N | SCR | ST Microelectronics | data |
BTW Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BTW30 | Fast Switching SCR
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DataSheet4U.c ST Microelectronics data | | |
| 2 | BTW38 | Thyristor, SCR
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DataSheet4U.c  NXP Semiconductors thyristor | | |
| 3 | BTW39 | SCR
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DataSheet4U.c ST Microelectronics data | | |
| 4 | BTW42-1200R | THYRISTOR Technical Data THYRISTOR
maximum ratings
VDRM VRRM IT (AV) IT (RMS) ITSM (tp = 10 ms) Max. Power Dissipation (PT) at TC = 25 °C Max. Thermal Resistance (Rth J-C) Max. Junction Temperature (TJ) empty
1200.0 V
1200.0 V
10.0 A
16.0 A
150.0 A
empty
W
1.8 °C/W
125.0 °C
empty empty
NO. TYP  DSI thyristor | | |
| 5 | BTW42-600R | GLASS PASSIVATED SILICON THYRISTORS New Jersey Semiconductor thyristor | | |
| 6 | BTW42-800 | GLASS PASSIVATED SILICON THYRISTORS New Jersey Semiconductor thyristor | | |
| 7 | BTW48 | SCR w
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