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PDF MRFIC1805 Data sheet ( Hoja de datos )

Número de pieza MRFIC1805
Descripción 1.9 GHz POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT
Fabricantes Motorola Semiconductors 
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRFIC1805/D
The MRFIC Line
1.9 GHz GaAs Power Amplifier
This two–stage class AB monolithic GaAs amplifier in a low–cost 16 lead
plastic package is designed for output or driver applications in 1.9 GHz PCS
handsets and basestations. The design is optimized for 3.0 Volt operation in
systems such as Japan’s PHS, Europe’s DECT and the emerging North
American PCS services. With modifications to the simple off–chip matching, the
device can be used in other applications from 1.5 to 2.5 GHz.
High Output Capability = 27 dBm Typical Psat
21.5 dBm Typical with PHS Format
High Gain = 21 dB Typical Small Signal, 20 dB at Pout = 22 dBm
Low Current Drain = 170 mA Typical with PHS Format
250 mA Typical with DECT Format
Low–Cost, Low Profile Plastic TSSOP Package
Order MRFIC1805R2 for Tape and Reel.
R2 Suffix = 2,500 Units per 16 mm, 13 inch Reel.
Device Marking = M1805
ABSOLUTE MAXIMUM RATINGS (TA = 25_ C unless otherwise noted)
Ratings
Supply Voltage
Supply Voltage
RF Input Power
Drain Current
Thermal Resistance, Junction to Air
Operating Junction Temperature
Ambient Operating Temperature
Storage Temperature
Symbol
VDD, VD1,
VD2
VSS
RFin
IDD
RθJA
TJ
TA
Tstg
MRFIC1805
1.9 GHz
POWER AMPLIFIER
GaAs MONOLITHIC
INTEGRATED CIRCUIT
CASE 948C–03
(TSSOP–16)
Value
6
–4
+10
500
240
+175
–30 to +85
–65 to +125
Unit
Vdc
Vdc
dBm
mA
/W
_C
_C
_C
RF OUT/ RF OUT/
PCNTRL GND VD1 GND GND VD2 VD2 N/C
16 15 14 13 12 11 10
9
GATE
BIAS
12345678
VSS GND GND GND GND GND RF IN N/C
Pin Connections and Functional Block Diagram
REV 1
www©.DMaMOtoaTtSoOrhoeRlae,OtI4nLUcA..1c9Ro9mF7 DEVICE DATA
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MRFIC1805
1

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MRFIC1805 pdf
f
MHz
1.50
1.55
1.60
1.65
1.70
1.75
1.80
1.85
1.90
1.95
2.00
2.05
2.10
2.15
2.20
2.25
2.30
2.35
2.40
2.45
2.50
Table 1. Small Signal S–Parameters
(VD1 = VD2 = 3 Vdc, TA = 25°C, f = 1.9 GHz, PCNTRL set for IDQ = 125 mA, no matching circuit)
|S11|
0.744
S11
φ
–76
S21
|S21|
φ
10.99
–104
|S12|
0.013
S12
φ
167
|S22|
0.494
S22
0.697
–76
11.01
–114
0.014
164
0.520
0.662
–75
10.39
–124
0.015
163
0.533
0.645
–75
9.22
–132
0.015
160
0.528
0.636
–75
8.93
–135
0.016
157
0.522
0.623
–75
8.90
–141
0.017
157
0.515
0.617
–75
8.24
–148
0.018
158
0.506
0.612
–76
7.70
–152
0.018
155
0.497
0.602
–76
7.06
–158
0.019
154
0.489
0.599
–78
6.41
–160
0.019
154
0.481
0.590
–79
6.16
–160
0.021
154
0.475
0.581
–80
6.12
–165
0.022
152
0.469
0.570
–81
5.83
–170
0.022
150.
0.461
0.562
–83
5.57
–174
0.023
151.
0.458
0.548
–84
5.27
–178
0.024
152
0.455
0.538
–86
5.00
–179
0.025
152
0.450
0.527
–88
4.81
–179
0.027
151
0.448
0.512
–90
4.60
175 0.027 149 0.447
0.499
–92
4.43
171 0.027 146 0.447
0.485
–94
4.27
169 0.028 149 0.449
0.471
–97
4.00
163 0.030 150 0.449
φ
–177
179
174
170
167
164
161
159
156
154
152
150
148
146
144
142
141
139
137
136
134
MOTOROLA RF DEVICE DATA
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