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PDF MRFIC1807 Data sheet ( Hoja de datos )
| Número de pieza | MRFIC1807 | |
| Descripción | 1.8 GHz POWER AMPLIFIER AND TRANSMIT/RECEIVE SWITCH GaAs MONOLITHIC INTEGRATED CIRCUIT | |
| Fabricantes | Motorola Semiconductors | |
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( DataSheet : www.DataSheet4U.com )
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The MRFIC Line
1.8 GHz Power Amp/Switch
Designed primarily for use in DECT, Japan Personal Handy System (PHS)
and other wireless Personal Communication Systems (PCS) applications.
The MRFIC1807 includes a single–stage power amplifier and transmit/receive
switch in a low–cost SOIC–16 package. The amplifier portion employs a
depletion mode power GaAs MESFET and produces up to +27 dBm output
with +19 dBm input. On–chip power control circuitry allows bias adjustment for
optimum performance. The T/R switch is capable of handling up to +28 dBm
through the transmit path without significant increase in insertion loss. The
switch is controlled by CMOS logic level signals — no negative control voltage
required. The MRFIC1807 is sized to be driven by the MRFIC1806 Driver/
Ramp IC.
Together with the rest of the MRFIC1800 GaAs ICs, this family offers the
complete transmit and receive functions, less LO and filters, needed for a
typical 1.8 GHz cordless telephone.
• Usable 1500 – 2200 MHz
• 8.0 dB Gain Including Switch
• +26 dBm Minimum Output Power at Antenna Port
• 1.0 dB Typ RX Path Insertion Loss
• Simple Off–Chip Matching for Maximum Flexibility
• 3.0 to 5.0 V Supply
• No Spurious Outputs for Load VSWR up to 8:1
• CMOS Level Switching Signal for T/R Switch
• Order MRFIC1807R2 for Tape and Reel.
R2 Suffix = 2,500 Units per 16 mm, 13 inch Reel.
• Device Marking = M1807
Order this document
by MRFIC1807/D
MRFIC1807
1.8 GHz POWER AMPLIFIER
AND TRANSMIT/RECEIVE
SWITCH
GaAs MONOLITHIC
INTEGRATED CIRCUIT
CASE 751B–05
(SO–16)
ANTENNA 1
GND 2
TX IN 3
PA OUT 4
GND 5
GND 6
RF IN 7
GND 8
REG VDD
GATE
BIAS
16 REG VDD
15 GND
14 RX OUT
13 VSS
12 GND
11 GND
10 TX/RX
9 PCNTRL
Figure 1. Pin Connection and Functional Block Diagram
REV 2
www©.DMaMtOoatSoTrhOoelaRe,tOI4nUcL..A1c9oR9m7F DEVICE DATA
www.DataSheet4U.com
MRFIC1807
1
1 page  
350
325 –10°C
300 70°C
275 TA = 25°C
250
225
200 Pin = 20 dBm
175
VDD = 3.5 V
IDDQ = 180 mA
150
1.5
1.6
1.7 1.8
1.9
2
f, FREQUENCY (GHz)
2.1 2.2
Figure 9. Supply Current versus Frequency
27.5
27 –10°C
26.5
26
70°C TA = 25°C
25.5
70°C
25
24.5 Pin = 20 dBm
24
VDD = 3.5 V
IDDQ = 180 mA
23.5
1.5
1.6
1.7 1.8 1.9
2
f, FREQUENCY (GHz)
2.1 2.2
Figure 10. Output Power versus Frequency
600
VDD = 3.5 V
500
400
70°C
300
TA = 25°C
200
–10°C
100
0
0 0.5 1 1.5 2 2.5
PCNTRL (VOLTS)
Figure 11. Quiescent Supply Current versus PCNTRL
3
–10°C
2
1
0 TA = 25°C
70°C
–1
Pout = 26 dBm
VDD = 3.5 V
IDDQ = 180 mA
–2
–3
–4
1.5 1.6 1.7 1.8 1.9
2
FREQUENCY (GHz)
2.1 2.2
Figure 13. Leakage Power at RX Port in TX
Mode versus Frequency
10
9 –10°C
8
7
TA = 25°C
70°C
6
5 Pin = 0 dBm
VDD = 3.5 V
4 IDDQ = 180 mA
3
1.5 1.6
1.7 1.8 1.9 2
f, FREQUENCY (GHz)
2.1 2.2
Figure 12. Small Signal Gain versus Frequency
1.5
TA = 25°C
1.4 REG VDD = 3 V
TX/RX = 0 V
1.3
1.2
1.1
1
1.5 1.6 1.7 1.8 1.9 2
FREQUENCY (GHz)
2.1 2.2
Figure 14. RX Path Insertion Loss in RX Mode
versus Frequency
MOTOROLA RF DEVICE DATA
MRFIC1807
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MRFIC1807.PDF ] | |
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