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PDF MRFIC1818 Data sheet ( Hoja de datos )

Número de pieza MRFIC1818
Descripción 1700-1900 MHz MMIC DCS1800/PCS1900 INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRFIC1818/D
The MRFIC Line
1800 MHz GaAs Integrated
Power Amplifier
Designed specifically for application in Pan European digital 1.0 watt DCS1800
handheld radios, the MRFIC1818 is specified for 33 dBm output power with power
gain over 30 dB from a 4.8 volt supply. With minor tuning changes, the MRFIC1818
can be used for PCS1900 as well as PCS CDMA. To achieve this superior
performance, Motorola’s planar GaAs MESFET process is employed. The device
is packaged in the PFP–16 Power Flat Package which gives excellent thermal
and electrical performance through a solderable backside contact while allowing
the convenience and cost benefits of reflow soldering.
Minimum Output Power Capabilities
33 dBm @ 4.8 Volts
32 dBm @ 4.0 Volts
Specified 4.8 Volt Characteristics
RF Input Power = 3.0 dBm
RF Output Power = 33 dBm
Minimum PAE = 35%
Low Current required from Negative Supply – 2 mA max
Guaranteed Stability and Ruggedness
Order MRFIC1818R2 for Tape and Reel.
R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
Device Marking = M1818
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, ZO = 50 , unless otherwise noted)
Rating
Symbol
DC Positive Supply Voltage
DC Negative Supply Voltage
RF Input Power
RF Output Power
Operating Case Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case
VD1, 2, 3
VSS
Pin
Pout
TC
Tstg
RθJC
MRFIC1818
1700–1900 MHz MMIC
DCS1800/PCS1900
INTEGRATED POWER AMPLIFIER
GaAs MONOLITHIC
INTEGRATED CIRCUIT
CASE 978–02
(PFP–16)
Value
7.5
–5
10
36
– 35 to +85
–55 to +150
10
Unit
Vdc
Vdc
dBm
dBm
°C
°C
°C/W
GND 9
VD2 10
VD2 11
VD1 12
N/C 13
GND 14
RF IN 15
N/C 16
8 VG
7 VD3
6 RF OUT
5 RF OUT
4 RF OUT
3 RF OUT
2 N/C
1 GND
Pin Connections and Functional Block Diagram
REV 2
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MRFIC1818
1

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MRFIC1818 pdf
Typical Characteristics
45
40
35 TA = –35°C
30
25
85°C
25°C
20
15
10 f = 1.75 GHz
Pin = 3 dBm
5 VSS = –4 V
0
01 23 4 56
VD1, VD2, DRAIN VOLTAGE (VOLTS)
Figure 9. Power Added Efficiency versus
Drain Voltage
35
33
31 TA = –35°C
29
27
25
23
21
19
17
15
–20
25°C
85°C
f = 1.75 GHz
VD1, VD2, VD3 = 4.8 V
VSS = –4 V
–15 –10 –5 0 5 10
Pin, INPUT POWER (dBm)
Figure 10. Output Power versus Input Power
45
40 TA = –35°C
35
30
25°C
25
20 85°C
15
f = 1.75 GHz
10 VD1, VD2, VD3 = 4.8 V
5 VSS = –4 V
0
–20 –15
–10 –5
0
Pin, INPUT POWER (dBm)
5
10
Figure 11. Power Added Efficiency versus
Input Power
50
48
46 25°C
44
85°C
42
40 TA = –35°C
38
36
f = 1.75 GHz
34 Pin = 3 dBm
32 VSS = –4 V
30
024 6
VD1, VD2, DRAIN VOLTAGE (VOLTS)
Figure 12. Second Harmonic versus
Drain Voltage
41
39
TA = –35°C
37
35 25°C
33
31 85°C
29 f = 1.75 GHz
27
Pin = 3 dBm
VSS = –4 V
25
0246
VD1, VD2, DRAIN VOLTAGE (VOLTS)
Figure 13. Third Harmonic versus
Drain Voltage
36
35.5 TA = –35°C
25°C
35
85°C
34.5
34
Pin = 3 dBm
VD1, VD2, VD3 = 4.8 V
VSS = –4 V
33.5
1.85 1.86 1.87 1.88 1.89 1.9 1.91
f, FREQUENCY (GHz)
Figure 14. Output Power Versus Frequency –
PCS Band
MOTOROLA RF DEVICE DATA
MRFIC1818
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