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PDF HZS6L1 Data sheet ( Hoja de datos )
| Número de pieza | HZS6L1 | |
| Descripción | (HZS-L Series) Silicon Epitaxial Planar Zener Diode for Low Noise Application | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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HZS-L Series
Silicon Epitaxial Planar Zener Diode for
Low Noise Application
REJ03G0166-0200Z
(Previous: ADE-208-121A)
Rev.2.00
Jan.06.2004
Features
• Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series.
• Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
stabilized power supply, etc.
• Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.
• Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No.
HZS-L Series
Mark
Type No.
Package Code
MHD
Pin Arrangement
B
12
2
Type No.
Cathode band
1. Cathode
2. Anode
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Rev.2.00, Jan.06.2003, page 1 of 6
1 page  
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HZS-L Series
Main Characteristic
10–2
10–3
10–4
10–5
10–6
10–7
10–8
0
5 10 15 20 25 30 35 40
Zener Voltage VZ (V)
Fig.1 Zener current vs. Zener voltage
0.10
0.08 %/°C
50
40
0.06 30
0.04 20
mV/°C
0.02 10
00
−0.02
−10
−0.04
−20
−0.06
−30
−0.08
−40
−0.10
−50
0 5 10 15 20 25 30 35 40
Zener Voltage VZ (V)
Fig.2 Temperature Coefficient vs. Zener voltage
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Rev.2.00, Jan.06.2003, page 5 of 6
500
400
300
l
2.5 mm
3 mm
Printed circuit board
100 × 180 × 1.6t mm
Quality: paper phenol
l = 5 mm
200
l = 10 mm
(Publication value)
100
0
0 50 100 150 200
Ambient Temperature Ta (°C)
Fig.3 Power Dissipation vs. Ambient Temperature
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HZS6L1.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| HZS6L | (HZS-L Series) Silicon Epitaxial Planar Zener Diode for Low Noise Application | Renesas Technology |
| HZS6L1 | (HZS-L Series) Silicon Epitaxial Planar Zener Diode for Low Noise Application | Renesas Technology |
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