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PDF 2SJ621 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ621 | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ621
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SJ621 is a switching device which can be driven directly
by a 1.8 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
• 1.8 V drive available
• Low on-state resistance
RDS(on)1 = 44 mΩ MAX. (VGS = –4.5 V, ID = –2.0 A)
RDS(on)2 = 56 mΩ MAX. (VGS = –3.0 V, ID = –2.0 A)
RDS(on)3 = 62 mΩ MAX. (VGS = –2.5 V, ID = –2.0 A)
RDS(on)4 = 105 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ621
Marking: XG
SC-96 (Mini Mold Thin Type)
PACKAGE DRAWING (Unit: mm)
0.4
+0.1
–0.05
0.16+–00..016
3
12
0 to 0.1
0.95 0.95
1.9
2.9 ±0.2
0.65
0.9 to 1.1
1 : Gate
2 : Source
3 : Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TA = 25°C) Note2
PT1
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
–12
m8.0
m3.5
m12
0.2
1.25
150
–55 to +150
V
V
A
A
W
W
°C
°C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board, t ≤ 5 sec.
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
www.DataSheet4U.comThe information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15634EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
Printed in Japan
©
2001
1 page  
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2SJ621
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
120
VGS = −1.8 V
P ulsed
100
TA = 125°C
80
75°C
25°C
60
−25°C
40
−0.01
−0.1
−1
−10
ID - Drain Current - A
−100
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
80
VGS = −3.0 V
70 Pulsed
60 TA = 125°C
50 75°C
25°C
40
−25°C
30
20
−0.01
−0.1
−1
−10
ID - Drain Current - A
−100
10000
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
1000
100
C iss
C oss
C rss
10
−0.1
−1 −10
−100
VDS - Drain to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
80
VGS = −2.5 V
P u lsed
70
TA = 125°C
60
75°C
50 25°C
40 −25°C
30
20
−0.01
−0.1
−1
−10
ID - Drain Current - A
−100
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
60
V GS = −4.5 V
P ulsed
50 TA = 125°C
75°C
40
25°C
−25°C
30
20
−0.01
−0.1 −1
−10
ID - Drain Current - A
−100
1000
100
SWITCHING CHARACTERISTICS
VDD = −6.0 V
VGS = −4.0 V
RG = 10 Ω
td(off)
tf
tr
10
−0.1
td(on)
−1
ID - Drain Current - A
−10
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Data Sheet D15634EJ1V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SJ621.PDF ] | |
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