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STQ1NC60R PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 STQ1NC60R
기능 N-CHANNEL MOSFET
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STQ1NC60R 데이터시트, 핀배열, 회로
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STQ1NC60R
N-CHANNEL 600V - 12- 0.3A TO-92
PowerMESH™II Power MOSFET
TYPE
VDSS
RDS(on)
STQ1NC60R
600 V
< 15
s TYPICAL RDS(on) = 12
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
ID
0.3 A
DESCRIPTION
Using the latest high voltage MESH OVERLAY™II
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprietary edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
TO-92
BULK
TO-92
(AMMOPACK)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s LOW SWITCH MODE POWER SUPPLIES
(SMPS)
s BATTERY CHARGER
ORDERING INFORMATION
SALES TYPE
MARKING
STQ1NC60R
Q1NC60R
STQ1NC60R-AP
Q1NC60R
PACKAGE
TO-92
TO-92
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PACKAGING
BULK
AMMOPACK
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STQ1NC60R pdf, 반도체, 판매, 대치품
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STQ1NC60R
.Output Characteristics
Transfer Characteristics
Tranconductance
Static Drain-Source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
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STQ1NC60R 전자부품, 판매, 대치품
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STQ1NC60R
DIM.
A
b
D
E
e
e1
L
R
S1
W
V
MIN.
4.32
0.36
4.45
3.30
2.41
1.14
12.70
2.16
0.92
0.41
TO-92 MECHANICAL DATA
mm.
TYP
MAX.
4.95
0.51
4.95
3.94
2.67
1.40
15.49
2.41
1.52
0.56
MIN.
0.170
0.014
0.175
0.130
0.094
0.044
0.50
0.085
0.036
0.016
inch
TYP.
MAX.
0.194
0.020
0.194
0.155
0.105
0.055
0.610
0.094
0.060
0.022
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관련 데이터시트

부품번호상세설명 및 기능제조사
STQ1NC60R

N-CHANNEL MOSFET

ST Microelectronics
ST Microelectronics

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