TPV3100 Datasheet PDF - Advanced Semiconductor
| Part Number | TPV3100 | |
| Description | NPN Silicon RF Power Transistor | |
| Manufacturers | Advanced Semiconductor | |
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ASI TPV3100
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TPV3100 is a Class AB
Common Device Designed for
Television Band IV & V Applications.
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballasting
Internal Matching
•
MAXIMUM RATINGS
IC 12 A
VCC
PDISS
TJ
T STG
θ JC
65 V
215 W @ TC = 25 OC
-55 OC to +200 OC
-55 OC to +200 OC
0.80 OC/W
PACKAGE STYLE .450 BAL FLG.(A)
1 = Collector 2 = Base
3 = Emitter
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCBO
IC = 20 mA
BVCER
IC = 10 mA
RBE = 75 Ω
BVEBO
IE = 10 mA
ICER VCE = 28 V
RBE = 75 Ω
hFE VCE = 10 V
IC = 2.0 A
MINIMUM TYPICAL MAXIMUM
65
30
4.0
10
30 120
UNITS
V
V
V
mA
---
P1dB
Pg
VCE = 28 V
VCE = 28 V
ICQ =2X50 mA
ICQ =2X50 mA
Fo = 860 MHz
Fo = 860 MHz
100
8.5
9.5
W
dB
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A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for TPV3100 electronic component. |
| Information | Total 1 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ TPV3100.PDF Datasheet ] | |
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