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PDF P60NF06 Data sheet ( Hoja de datos )
| Número de pieza | P60NF06 | |
| Descripción | STP60NF06 | |
| Fabricantes | ST Microelectronics | |
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 1. 60V, 60A, MOSFET - STP60NF06  Hay una vista previa y un enlace de descarga de P60NF06 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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STP60NF06
N-channel 60V - 0.014Ω - 60A TO-220
STripFET II™ Power MOSFET
General features
Type
STP60NF06
VDSS
60V
RDS(on)
<0.016Ω
ID
60A
■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters for Telecom
and Computer application. It is also intended for
any application with low gate charge drive
requirements.
3
2
1
TO-220
Internal schematic diagram
Applications
■ Switching application
Order code
Part number
STP60NF06
Marking
P60NF06
Package
TO-220
Packaging
Tube
March 2007
Rev 6
1/12
www.st.com
12
1 page  
STP60NF06
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 60A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 60A, VDD=30V
di/dt = 100A/µs, Tj = 150°C
(see Figure 13)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min Typ. Max Unit
60 A
240 A
1.3 V
70 ns
185 nC
5A
5/12
5 Page 
STP60NF06
5 Revision history
Table 8. Revision history
Date
Revision
Changes
09-Sep-2004
3 Complete version
17-Aug-2006
4 The document has been reformatted
04-Oct-2006
5 Changes in Dynamic
02-Mar-2007
6 Safe operating area has been updated
Revision history
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet P60NF06.PDF ] | |
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