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PDF STP4NA80FI Data sheet ( Hoja de datos )
| Número de pieza | STP4NA80FI | |
| Descripción | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STP4NA80
STP4NA80FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
ST P 4NA 80
ST P 4NA 80 F I
VDSS
800 V
800 V
R DS( on)
<3Ω
<3Ω
ID
4A
2.5 A
s TYPICAL RDS(on) = 2.4 Ω
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INTRINSIC CAPACITANCES
s GATE GHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with a new
proprietary edge termination concur to give the
device low RDS(on) and gate charge, unequalled
ruggedness and superior switching performance.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S Drain-source Voltage (VGS = 0)
VDG R Drain-gate Voltage (RG S = 20 kΩ)
VGS
mID
.coID
ID M(•)
t4UPtot
Gate-source Voltage
Drain Current (continuous) at T c = 25 oC
Drain Current (continuous) at T c = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
eDerating Factor
eVISO Insulation Withstand Voltage (DC)
ShTstg Storage Temperature
taTj Max. Operating Junction Temperature
a(•) Pulse width limited by safe operating area
www.DFebruary 1994
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
Val ue
STP4NA80
STP4NA80FI
800
800
± 30
4 2.5
2.5 1.6
16 16
110 45
0. 88
0. 36
2000
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/10
1 page  
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Transconductance
STP4NA80/FI
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
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Normalized On Resistance vs Temperature
5/10
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet STP4NA80FI.PDF ] | |
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