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PDF BUK215-50YT Data sheet ( Hoja de datos )
| Número de pieza | BUK215-50YT | |
| Descripción | TOPFET High Side Switch SMD Version | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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www.DataSheet4U.com
Philips Semiconductors
TOPFET high side switch
SMD version
Product Specification
BUK215-50YT
DESCRIPTION
Monolithic single channel high side
protected power switch in
TOPFET2 technology assembled in
a 5 pin plastic surface mount
package.
APPLICATIONS
General controller for driving
lamps, motors, solenoids, heaters.
FEATURES
Vertical power TrenchMOS
Low on-state resistance
CMOS logic compatible
Very low quiescent current
Latched overtemperature
protection
Load current limiting
Latched short circuit load
protection
Overvoltage and undervoltage
shutdown with hysteresis
Diagnostic status indication
Voltage clamping for turn off
of inductive loads
ESD protection on all pins
Reverse battery, overvoltage
and transient protection
QUICK REFERENCE DATA
SYMBOL PARAMETER
IL Nominal load current (ISO)
SYMBOL PARAMETER
VBG Continuous off-state supply voltage
IL Continuous load current
Tj Continuous junction temperature
RON On-state resistance Tj = 25˚C
FUNCTIONAL BLOCK DIAGRAM
STATUS
INPUT
GROUND
CONTROL &
PROTECTION
CIRCUITS
RG
MIN.
9
UNIT
A
MAX.
50
20
150
38
UNIT
V
A
˚C
mΩ
BATT
POWER
MOSFET
LOAD
Fig.1. Elements of the TOPFET HSS with internal ground resistor.
PINNING - SOT426
PIN CONFIGURATION
PIN DESCRIPTION
1 Ground
om2 Input
.c3 (connected to mb)
U4 Status
t45 Load
eemb Battery
www.DataShJune 2000
mb
3
12 45
Fig. 2.
1
SYMBOL
IB
TOPFET L
S HSS
G
Fig. 3.
Rev 1.000
1 page  
www.DataSheet4U.com
Philips Semiconductors
TOPFET high side switch
SMD version
Product Specification
BUK215-50YT
UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C. Refer to TRUTH TABLE.
SYMBOL PARAMETER
CONDITIONS
MIN.
Undervoltage
TYP.
MAX. UNIT
VBG(UV)
∆VBG(UV)
Low supply threshold voltage1
Hysteresis
Overvoltage
2 4.2 5.5 V
- 0.5 -
V
VBG(OV)
∆VBG(OV)
High supply threshold voltage2
Hysteresis
40 45 50
-1-
V
V
TRUTH TABLE
INPUT
L
H
H
H
H
H
ABNORMAL CONDITIONS
DETECTED
SUPPLY
LOAD
UV OV LC SC OT
X X XXX
0 0 X00
1 0 XXX
0 1 X00
0 0 010
0 0 XX1
LOAD
OUTPUT STATUS
DESCRIPTION
OFF
ON
OFF
OFF
OFF
OFF
H off
H on & normal (LC not detected!)
H supply undervoltage lockout
H supply overvoltage shutdown
L SC protection
L OT shutdown
KEY TO ABBREVIATIONS
L logic low
H logic high
X don’t care
0 condition not present
1 condition present
UV undervoltage
OV overvoltage
LC low current or open circuit load
SC short circuit
OT overtemperature
ataSheet4U.com1 Undervoltage sensor causes the device to switch off and reset.
.D2 Overvoltage sensor causes the device to switch off to protect its load.
wwwJune 2000
5
Rev 1.000
5 Page 
www.DataSheet4U.com
Philips Semiconductors
TOPFET high side switch
SMD version
Product Specification
BUK215-50YT
10 nF CBL
BUK215-50YT
1nF
100pF
0 10 20 VBL / V 30 40 50
Fig.28. Typical output capacitance. Tmb = 25 ˚C
Cbl = f(VBL); conditions f = 1 MHz, VIG = 0 V
0 IG / mA
BUK215-50YT
-50
-100
-150
-200
-20 -15 -10
-5
VBG / V
0
Fig.29. Typical reverse battery characteristic.
IG = f(VBG); conditions IL = 0 A, Tj = 25 ˚C
VBL(TO) / V
12.0
BUK215-50YT
11.8
11.6
11.4
11.2
11.0
10.8
10.6
10.4
10.2
10.0
-50 0
50 100 150 200
Tj / OC
Fig.31. Typical short circuit load threshold voltage.
VBL(TO) = f(Tj); condition VBG = 16 V
1e+01
Zth j-mb ( K / W )
BUK215-50YT
1e+00
1e-01
D=
0.5
0.2
0.1
0.05
0.02
1e-02
0
PD tp
D = tp
T
1e-03
1e-07
1e-05
1e-03
t/s
T
1e-01
t
Fig.32. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
1e+02
IL(lim) / A
50
BUK215-50YT
45
.com40
t4U35
ee30
h-50 0 50 Tj / OC 100 150 200
SFig.30. Typical overload current, VBL = 8V.
taIL = f(Tj); parameter VBG = 13V;tp = 300 µs
www.DaJune 2000
11
Rev 1.000
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| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet BUK215-50YT.PDF ] | |
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