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부품번호 | STP6NK60ZFP 기능 |
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기능 | N-CHANNEL MOSFET | ||
제조업체 | ST Microelectronics | ||
로고 | |||
전체 15 페이지수
STB6NK60Z - STB6NK60Z-1
STP6NK60ZFP - STP6NK60Z
N-channel 600 V - 1 Ω - 6 A - TO-220/TO-220FP/D2PAK/I2PAK
Zener-Protected SuperMESH™ Power MOSFET
Features
Type
STB6NK60Z
STB6NK60Z-1
STP6NK60ZFP
STP6NK60Z
VDSS
600 V
600 V
600 V
600 V
RDS(on) ID
PW
< 1.2 Ω 6 A 110 W
< 1.2 Ω 6 A 110 W
< 1.2 Ω 6 A 30 W
< 1.2 Ω 6 A 110 W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
Application
■ Switching applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
www.DataSheet4U.com
3
2
1
TO-220
3
1
D²PAK
123
I²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STB6NK60Z
B6NK60Z
STB6NK60Z-1
B6NK60Z
STP6NK60ZFP
P6NK60ZFP
STP6NK60Z
P6NK60Z
Package
D²PAK
I²PAK
TO-220FP
TO-220
November 2007
Rev 8
Packaging
Tape & reel
Tube
Tube
Tube
1/17
www.st.com
17
Electrical characteristics
STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
V(BR)DSS
Drain-source
breakdown voltage
IDSS
Zero gate voltage
drain current (VGS = 0)
IGSS
Gate-body leakage
current (VDS = 0)
VGS(th) Gate threshold voltage
RDS(on)
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 1 mA, VGS = 0
600
VDS = Max rating
VDS = Max rating, TC = 125 °C
V
1 µA
50 µA
VGS = ± 20 V
VDS = VGS, ID = 100 µA
VGS = 10 V, ID = 3 A
±10 µA
3 3.75 4.5
1 1.2
V
Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Ciss
Coss
Crss
Forward transconductance VDS = 8 V, ID = 3 A
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
5S
pF
905
pF
115
pF
25
Coss
(2)
eq .
Equivalent output
capacitance
VGS = 0, VDS = 0 to 480 V
56 pF
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Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 480 V, ID = 6 A,
VGS = 10 V
(see Figure 18)
33 46 nC
6 nC
17 nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/17
4페이지 STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z
Electrical characteristics
Figure 8. Transconductance
Figure 9. Static drain-source on resistance
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs
www.DataSheet4U.com vs temperature
temperature
7/17
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부품번호 | 상세설명 및 기능 | 제조사 |
STP6NK60ZFP | N-CHANNEL MOSFET | ST Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |