STP6NK90ZFP Datasheet PDF - ST Microelectronics
| Part Number | STP6NK90ZFP | |
| Description | N-CHANNEL MOSFET | |
| Manufacturers | ST Microelectronics | |
| Logo |  |
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STP6NK90Z - STP6NK90ZFP
STB6NK90Z - STW7NK90Z
N-channel 900V - 1.56Ω - 5.8A - TO-220/TO-220FP/D2PAK/TO-247
Zener-protected SuperMESH™ Power MOSFET
Features
Type
STP6NK90Z
STP6NK90ZFP
STB6NK90Z
STW7NK90Z
VDSS
900 V
900 V
900 V
900 V
RDS(on)
<2Ω
<2Ω
<2Ω
<2Ω
ID
5.8 A
5.8 A
5.8 A
5.8 A
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs.
Application
■ Switching application
TO-220
3
2
1
TO-220FP
3
1
D2PAK
TO-247
Internal schematic diagram
Order codes
Part number
STP6NK90Z
STP6NK90ZFP
STB6NK90ZT4
STW7NK90Z
April 2007
Marking
P6NK90Z
P6NK90ZFP
B6NK90Z
W7NK90Z
Package
TO-220
TO-220FP
D2PAK
TO-247
Rev 5
Packaging
Tube
Tube
Tape e reel
Tube
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www.st.com
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STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z
2 Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
V(BR)DSS
Drain-source
Breakdown voltage
IDSS
Zero gate voltage
Drain current (VGS = 0)
IGSS
Gate-body leakage
Current (VDS = 0)
VGS(th) Gate threshold voltage
RDS(on)
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID =1mA, VGS = 0
900
VDS = Max Rating
VDS = Max Rating, TC = 125°C
V
1 µA
50 µA
VGS = ± 20 V
VDS = VGS, ID = 100 µA
VGS = 10 V, ID = 2.9 A
± 10 µA
3 3.75 4.5
1.56 2
V
Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1) Forward transconductance VDS = 15v, ID = 2.9 A
5S
Ciss
Coss
Crss
Input capacitance
Output capacitance
VDS = 25 V, f = 1 MHz,
Reverse transfer capacitance VGS = 0
1350
130
26
pF
pF
pF
Coss eq. (2) Equivalent output
capacitance
VDS =0V, VDS = 0V to 720V
70
pF
td(on)
tr
tr(off)
tr
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 450 V, ID = 3 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 20)
17 ns
45 ns
20 ns
20 ns
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 720 V, ID = 5.8 A,
VGS = 10 V
46.5 60.5
8.5
25
nC
nC
nC
Tr(Voff)
Tr
Tc
Off-voltage rise time
Fall time
Cross-over time
VDD = 720 V, ID = 5.8 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 22)
11 ns
12 ns
20 ns
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
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| Information | Total 18 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ STP6NK90ZFP.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| STP6NK90ZFP | The function is N-CHANNEL MOSFET. ST Microelectronics | |
| STP6NK90ZFP | The function is N-channel Power MOSFET. STMicroelectronics |  |
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