PDF CPV362M4F Data sheet ( Hoja de datos )

Número de pieza	CPV362M4F
Descripción	IGBT SIP MODULE
Fabricantes	International Rectifier
Logotipo
Hay una vista previa y un enlace de descarga de CPV362M4F (archivo pdf) en la parte inferior de esta página. Total 10 Páginas
No Preview Available ! www.DataSheet4U.com PD -5.046 CPV362M4F IGBT SIP MODULE Fast IGBT Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes • Optimized for medium operating (1 to 10 kHz) See Fig. 1 for Current vs. Frequency curve 3 Q1 6 Q2 1 D1 9 Q3 4 D2 12 Q4 D3 15 Q5 10 D4 18 Q6 D5 16 D6 Product Summary Output Current in a Typical 5.0 kHz Motor Drive 7 13 11 ARMS per phase (3.1 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 115% (See Figure 1) 19 Description The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. IMS-2 Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE VISOL PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Isolation Voltage, any terminal to case, 1 minute Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw Max. 600 8.8 4.8 26 26 3.4 26 ±20 2500 23 9.1 -40 to +150 300 (0.063 in. (1.6mm) from case) 5-7 lbf•in (0.55-0.8 N•m) Units V A V VRMS W °C Thermal Resistance RθJC(IGBT) RθJC(DIODE) RθCS (MODULE) Wt Parameter Junction-to-Case, each IGBT, one IGBT in conduction Junction-to-Case, each diode, one diode in conduction Case-to-Sink, flat, greased surface Weight of module Typ. ––– ––– 0.1 20 (0.7) Max. 5.5 9.0 ––– ––– Units °C/W g (oz) 9/16/97 1 page www.DataSheet4U.com 1000 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc 800 Coes = Cce + Cgc 600 Cies 400 200 0 1 Coes Cres 10 100 VCE, Collector-to-Emitter Voltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0.46 VCC = 480V VGE = 15V TJ = 25 °C IC = 4.8A 0.45 0.44 0.43 CPV362M4F 20 VCC = 400V I C = 4.8A 16 12 8 4 0 0 6 12 18 24 30 QG, Total Gate Charge (nC) Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 10 RG = 5500OΩhm VGE = 15V VCC = 480V 1 IC = 9.6A IC = 4.8A IC = 2.4A 0.42 10 20 30 40 RG , Gate Resistance(Ω(O)hm) 50 Fig. 9 - Typical Switching Losses vs. Gate Resistance 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 Page

Páginas	Total 10 Páginas
PDF Descargar	[ Datasheet CPV362M4F.PDF ]

Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
CPV362M4F	IGBT SIP MODULE	International Rectifier
CPV362M4FPbF	IGBT SIP Module	Vishay
CPV362M4U	UltraFast IGBT IGBT SIP MODULE	International Rectifier
CPV362M4U	UltraFast IGBT IGBT SIP MODULE	International Rectifier

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.

DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar