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PDF D30NF03L Data sheet ( Hoja de datos )

Número de pieza D30NF03L
Descripción STD30NF03L
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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No Preview Available ! D30NF03L Hoja de datos, Descripción, Manual

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® STD30NF03L
N - CHANNEL 30V - 0.020 - 30A DPAK
STripFETPOWER MOSFET
TYPE
VDSS
RDS(o n)
ID
STD30NF03L 30 V
< 0.025
30 A
s TYPICAL RDS(on) = 0.020
s LOW THRESHOLD DRIVE
s ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
Va l u e
VDS
VDGR
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
30
30
VG S
ID()
ID
IDM(••)
Ptot
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
± 20
30
19
120
40
Derating Factor
0.27
EAS (1) Single Pulse Avalanche Energy
100
Tstg Storage Temperature
-65 to 175
Tj Max. Operating Junction Temperature
(••) Pulse width limited by safe operating area
()Current limited by the package
175
( 1) starting Tj = 25 oC, ID = 15A , VDD = 15V
October 1999
Unit
V
V
V
A
A
A
W
W /o C
m/J
oC
oC
1/8

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D30NF03L pdf
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Normalized Gate Threshold Voltage vs
Temperature
STD30NF03L
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8

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