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PDF STD30PF03L-1 Data sheet ( Hoja de datos )
| Número de pieza | STD30PF03L-1 | |
| Descripción | P-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
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STD30PF03L
STD30PF03L-1
P-CHANNEL 30V - 0.025Ω - 24A DPAK/IPAK
STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STD30PF03L
STD30PF03L-1
30 V
30 V
< 0.028Ω
< 0.028Ω
24 A
24 A
s TYPICAL RDS(on) = 0.025Ω
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
s LOW GATE CHARGE
s EXTREMELY LOW FIGURE OF MERIT
(RDS(on) * Qg)
3
1
DPAK
3
2
1
IPAK
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting transis-
tor shows extremely high packing density for low
on-resistance and low gate charge.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC-DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID (#)
Drain Current (continuous) at TC = 25°C
ID (#)
Drain Current (continuous) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
(#) Current limited by wire bonding
May 2002
Value
Unit
30 V
30 V
± 16 V
24 A
24 A
96 A
70 W
0.47 W/°C
– 55 to 175
°C
175 °C
Note:For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
1/8
1 page  
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STD30PF03L - STD30PF03L-1
DIM.
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
TO-252 (DPAK) MECHANICAL DATA
MIN.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
0.60
0o
mm
TYP.
0.8
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
1.00
8o
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
0.024
0o
inch
TYP.
0.031
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
0.039
0o
P032P_B
5/8
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| PDF Descargar | [ Datasheet STD30PF03L-1.PDF ] | |
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