Datasheet.kr   

IRLZ34N 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 IRLZ34N은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 IRLZ34N 자료 제공

부품번호 IRLZ34N 기능
기능 55V Single N-channel HexFET Power MOSFET in a TO-220AB Package
제조업체 International Rectifier
로고 International Rectifier 로고


IRLZ34N 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 8 페이지수

미리보기를 사용할 수 없습니다

IRLZ34N 데이터시트, 핀배열, 회로
www.DataSheet4U.com
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
PD - 9.1307B
IRLZ34N
HEXFET® Power MOSFET
D
VDSS = 55V
G RDS(on) = 0.035
S ID = 30A
TO-220AB
Max.
30
21
110
68
0.45
±16
110
16
6.8
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Min.
––––
––––
––––
Typ.
––––
0.50
––––
Max.
2.2
––––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/25/97




IRLZ34N pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
IRLZ34N
1400
1200
1000
C iss
V GS = 0V ,
f = 1MH z
C is s = Cgs + C g d , Cds SH OR TED
C rss = Cg d
C oss = Cds + C gd
800
C o ss
600
400
C rss
200
0A
1 10 100
V D S , Drain-to-Source V oltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
TJ = 175°C
TJ = 2 5°C
10
1 VGS = 0 V A
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V SD , S ource-to-Drain Voltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
15
I D = 16A
12
V DS = 44V
V DS = 28V
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0A
0 4 8 12 16 20 24 28 32
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
100
10µ s
1 00µs
10
1m s
TC = 25°C
TJ = 175°C
S ing le Pulse
1
1
10
10m s
A
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area

4페이지










IRLZ34N 전자부품, 판매, 대치품
www.DataSheet4U.com
IRLZ34N
D.U.T
+
‚
-

RG
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
Low Stray Inductance
ƒ
Ground Plane
Low Leakage Inductance
Current Transformer
-
-
„
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
- VDD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
VDD
ISD

7페이지


구       성 총 8 페이지수
다운로드[ IRLZ34N.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
IRLZ34

HEXFET POWER MOSFET

International Rectifier
International Rectifier
IRLZ34

Power MOSFET ( Transistor )

Vishay
Vishay

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵