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부품번호 | IRLZ34N 기능 |
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기능 | 55V Single N-channel HexFET Power MOSFET in a TO-220AB Package | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 8 페이지수
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l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
PD - 9.1307B
IRLZ34N
HEXFET® Power MOSFET
D
VDSS = 55V
G RDS(on) = 0.035Ω
S ID = 30A
TO-220AB
Max.
30
21
110
68
0.45
±16
110
16
6.8
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Min.
––––
––––
––––
Typ.
––––
0.50
––––
Max.
2.2
––––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/25/97
www.DataSheet4U.com
IRLZ34N
1400
1200
1000
C iss
V GS = 0V ,
f = 1MH z
C is s = Cgs + C g d , Cds SH OR TED
C rss = Cg d
C oss = Cds + C gd
800
C o ss
600
400
C rss
200
0A
1 10 100
V D S , Drain-to-Source V oltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
TJ = 175°C
TJ = 2 5°C
10
1 VGS = 0 V A
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V SD , S ource-to-Drain Voltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
15
I D = 16A
12
V DS = 44V
V DS = 28V
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0A
0 4 8 12 16 20 24 28 32
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
100
10µ s
1 00µs
10
1m s
TC = 25°C
TJ = 175°C
S ing le Pulse
1
1
10
10m s
A
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLZ34N
D.U.T
+
-
RG
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
+
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
- VDD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
VDD
ISD
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
IRLZ34 | HEXFET POWER MOSFET | International Rectifier |
IRLZ34 | Power MOSFET ( Transistor ) | Vishay |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |