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IRLZ34N 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 IRLZ34N은 전자 산업 및 응용 분야에서
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부품번호 IRLZ34N 기능
기능 N-channel Enhancement Mode Logic Level Trenchmos (tm) Transistor
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IRLZ34N 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Philips Semiconductors
N-channel enhancement mode
Logic level TrenchMOSTM transistor
Product specification
IRLZ34N
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic envelope using ’trench
technology. The device features very
low on-state resistance and has
integral zener diodes giving ESD
protection up to 2kV. It is intended for
use in switched mode power supplies
and general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
VGS = 10 V
MAX.
55
30
68
175
35
PINNING - TO220AB
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
PIN CONFIGURATION
tab
1 23
SYMBOL
d
g
s
UNIT
V
A
W
˚C
m
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 175˚C
Tj = 25 ˚C to 175˚C; RGS = 20 k
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
ESD LIMITING VALUE
SYMBOL PARAMETER
VC Electrostatic discharge
capacitor voltage, all pins
CONDITIONS
Human body model (100 pF, 1.5 k)
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
± 13
30
21
110
68
175
UNIT
V
V
V
A
A
A
W
˚C
TYP.
-
60
MAX.
2.2
-
UNIT
K/W
K/W
MIN.
-
MAX.
2
UNIT
kV
February 1999
1
Rev 1.000




IRLZ34N pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
Philips Semiconductors
N-channel enhancement mode
Logic level TrenchMOSTM transistor
Product specification
IRLZ34N
Drain current, ID (A)
100 10
7
80
60
VGS = 6.0 V
5.6
5.0
4.6
4.0
40
3.6
20
3.0
0
0 2 4 6 8 10
Drain-source voltage, VDS (V)
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
45 RDS(ON)/mOhm
VGS/V =
40
35
30
4
4.2
4.4
4.6
4.8
5
25
0
Fig.6.
10 20 30 ID/A 40 50 60
Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
70
ID/A
60
50
40
30
20
10
Tj/C = 175
25
0
0 1 2 3 VGS/V 4 5 6 7
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Transconductance, gfs (S)
30
25
20
15
10
5
0 10 20 30 40 50 60 70
Drain current, ID (A)
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
2.5 a
BUK959-60 Rds(on) normlised to 25degC
2
1.5
1
0.5
-100
-50
0 50 100 150 200
Tmb / degC
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 17 A; VGS = 5 V
VGS(TO) / V
2.5
max.
2
typ.
1.5
min.
1
BUK959-60
0.5
0
-100
-50
0 50
Tj / C
100 150 200
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
February 1999
4
Rev 1.000

4페이지










IRLZ34N 전자부품, 판매, 대치품
www.DataSheet4U.com
Philips Semiconductors
N-channel enhancement mode
Logic level TrenchMOSTM transistor
Product specification
IRLZ34N
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1999
7
Rev 1.000

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