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PDF SUB65P06-20 Data sheet ( Hoja de datos )
| Número de pieza | SUB65P06-20 | |
| Descripción | P-Channel Enhancement-Mode Transistors | |
| Fabricantes | TEMIC Semiconductors | |
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SUP/SUB65P06-20
P-Channel Enhancement-Mode Transistors
Product Summary
V(BR)DSS (V)
–60
rDS(on) (W)
0.020
TOĆ220AB
ID (A)
–65a
S
TOĆ263
G
DRAIN connected to TAB
GD S
Top View
SUP65P06Ć20
GDS
Top View
SUB65P06Ć20
D
PĆChannel MOSFET
Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
www.DataSheet4U.comParameter
Symbol
Limit
Unit
Gate-Source Voltage
Continuous Drain Current
(TJ = 175_C)
Pulsed Drain Current
TC = 25_C
TC = 125_C
Avalanche Current
Repetitive Avalanche Energyb
L = 0.1 mH
Power Dissipation
TC = 25_C (TO-220AB and TO-263)
TA = 125_C (TO-263)c
Operating Junction and Storage Temperature Range
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
"20
–65a
–39
–200
–60
180
187d
3.7
–55 to 175
V
A
mJ
W
_C
Thermal Resistance Ratings
Parameter
Symbol
Limit
Unit
Junction-to-Ambient
PCB Mount (TO-263)c
Free Air (TO-220AB)
RthJA
RthJA
40
62.5 _C/W
Junction-to-Case
RthJC
0.8
Notes:
a. Package limited.
b. Duty cycle v 1%.
c. When mounted on 1” square PCB (FR-4 material).
d. See SOA curve for voltage derating.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70289.
A SPICE Model data sheet is available for this product (FaxBack document #70543).
Siliconix
P-39628—Rev. A, 28-Dec-94
1
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