(PDF) SUB75P03-08 Datasheet - P-Channel MOSFET

Número de pieza	SUB75P03-08
Descripción	P-Channel MOSFET
Fabricantes	Vishay Siliconix
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No Preview Available ! www.DataSheet4U.com SUP/SUB75P03-08 Vishay Siliconix P-Channel 30-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) –30 0.008 ID (A) –75a TO-220AB S TO-263 G DRAIN connected to TAB GD S Top View SUP75P03-08 G DS Top View SUB75P03-08 D P-Channel MOSFET www.DataSheet4U.comABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current TC = 25_C TC = 125_C Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH Power Dissipation TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)c Operating Junction and Storage Temperature Range VGS ID IDM IAR EAR PD TJ, Tstg "20 –75a –65 –200 –75 280 250d 3.7 –55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case PCB Mount (TO-263)c Free Air (TO-220AB) Notes: a. Package limited. b. Duty cycle v 1%. c. When mounted on 1” square PCB (FR-4 material). d. See SOA curve for voltage derating. Document Number: 70772 S-05111—Rev. D, 10-Dec-99 Symbol RthJA RthJA RthJC Limit 40 62.5 0.6 Unit _C/W www.vishay.com 1 www.DataSheet4U.com 1 page

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PDF SUB75P03-08 Data sheet ( Hoja de datos )