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PDF SUB75N06-08 Data sheet ( Hoja de datos )
| Número de pieza | SUB75N06-08 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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SUP/SUB75N06-08
N-Channel Enhancement-Mode Transistors
Product Summary
V(BR)DSS (V)
60
rDS(on) (W)
0.008
TO-220AB
ID (A)
75a
D
TO-263
DRAIN connected to TAB
G
GD S
Top View
SUP75N06-08
G DS
Top View
SUB75N06-08
S
N-Channel MOSFET
Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
www.DataSheet4U.comParameter
Symbol
Limit
Unit
Gate-Source Voltage
Continuous Drain Current
(TJ = 175_C)
Pulsed Drain Current
TC = 25_C
TC = 125_C
Avalanche Current
Repetitive Avalanche Energyb
L = 0.1 mH
Power Dissipation
TC = 25_C (TO-220AB and TO-263)
TA = 25_C (TO-263)d
Operating Junction and Storage Temperature Range
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
"20
75a
55
240
60
280
187c
3.7
–55 to 175
V
A
mJ
W
_C
Thermal Resistance Ratings
Parameter
Symbol
Limit
Unit
Junction-to-Ambient
PCB Mount (TO-263)d
40
RthJA
Free Air (TO-220AB)
62.5 _C/W
Junction-to-Case
RthJC
0.8
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document # 70283.
A SPICE Model data sheet is available for this product (FaxBack document #70527).
Siliconix
S-47969—Rev. D, 08-Jul-96
1
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SUB75N06-08.PDF ] | |
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