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부품번호 | PH2625L 기능 |
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기능 | N-channel TrenchMOS-TM logic level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
www.DataSheet4U.com
PH2625L
N-channel TrenchMOS™ logic level FET
Rev. 02 — 24 February 2005
Preliminary data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS™ technology.
1.2 Features
s Optimized for use in DC-to-DC
converters
s Low threshold voltage
s Very low switching and conduction
losses
s Low thermal resistance.
1.3 Applications
s DC-to-DC converters
s Voltage regulators
s Switched-mode power supplies
s Notebook computers.
1.4 Quick reference data
www.DataSheet4U.coms VDS ≤ 25 V
s ID ≤ 100 A
s Qgd = 7.3 nC (typ)
s Qg(tot) = 32 nC (typ)
s RDSon ≤ 2.8 mΩ (VGS = 10 V)
s RDSon ≤ 4.1 mΩ (VGS = 4.5 V).
2. Pinning information
Table 1:
Pin
1, 2, 3
4
mb
Pinning
Description
source
gate
mounting base; connected to drain
Simplified outline
mb
Symbol
D
G
mbb076 S
1234
SOT669 (LFPAK)
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www.DataSheet4U.com
Philips Semiconductors
PH2625L
N-channel TrenchMOS™ logic level FET
5. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
Rth(j-mb) thermal resistance from junction to mounting base Figure 4
Min Typ Max Unit
- - 2 K/W
10
Zth(j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
0.05
0.02
10-1
single pulse
003aaa552
P
δ=
tp
T
tp t
T
10-2 10-5
10-4
10-3 10-2 10-1 tp (s)
www.DataSheet4U.comFig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
1
9397 750 14324
Preliminary data sheet
Rev. 02 — 24 February 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
4 of 13
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Philips Semiconductors
PH2625L
N-channel TrenchMOS™ logic level FET
2.5
VGS(th)
(V)
2
1.5
1
03aa33
max
typ
min
10-1
ID
(A)
10-2
10-3
10-4
03aa36
min typ max
0.5 10-5
0
-60 0 60 120 180
Tj (°C)
10-6
0123
VGS (V)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Tj = 25 °C; VDS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
10
VGS
(V)
8
6
4
2
0
0
003aaa558
VDS (V) = 4.5
www.DataSheet4U.com12
VDS
19
ID
Vplat
20 40
60 QG (nC) 80
VGS(th)
VGS
Qgs1 Qgs2
Qgs Qgd
Qg(tot)
003aaa508
ID = 25 A; VDS = 4.5 V, 12 V and 19 V
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Gate charge waveform definitions
9397 750 14324
Preliminary data sheet
Rev. 02 — 24 February 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
7 of 13
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부품번호 | 상세설명 및 기능 | 제조사 |
PH2625L | N-channel TrenchMOS-TM logic level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |