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PDF CSD655 Data sheet ( Hoja de datos )
| Número de pieza | CSD655 | |
| Descripción | NPN EPITAXIAL PLANAR SILICON TRANSISTOR | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CSD655 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
IS/ISO 9002
IS / IECQC 700000
Lic# QSC/L- 000019.2 IS / IECQC 750100
CSD655
(9AW)
TO-92
BCE
Marking : As Below
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
VCBO
30
Collector -Emitter Voltage
VCEO
15
Emitter Base Voltage
VEBO
5.0
Collector Current
IC
700
Peak
ICP
1.0
Collector Power Dissipation
PC
500
Operating And Storage Junction
Tj, Tstg
-55 to +150
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
Collector -Base Voltage
www.DataSheet4U.comCollector -Emitter Voltage
VCBO
IC=10uA, IE=0
30 -
VCEO IC=10mA, IB=0 15 -
Emitter Base Voltage
VEBO
IE=10uA, IC=0
5.0
-
Collector Cut off Current
ICBO
VCB=20V, IE=0
-
-
Base Emitter Voltage
VBE(on) IC=150mA,VCE=1V
-
-
Collector Emitter Saturation Voltage VCE(Sat) IC=500mA,IB=50mA
-
-
DC Current Gain
hFE IC=150mA,VCE=1V 250
-
Dynamic Characteristics
Transition Frequency
ft
VCE=1V,IC=150mA,
-
250
Collector Out-put Capacitance
Cob VCB=10V, IE=0
-
-
f=1MHz
In-put Capacitance
Cib VEB=0.5V, IC=0
-
-
f=1MHz
hFE CLASSIFICATION
D : 250-500;
E : 300-800;
F : 600-1200
MARKING
CD
655
E
UNIT
V
V
V
mA
A
mW
deg C
MAX
-
-
-
1.0
1.0
0.50
1200
-
30
120
UNIT
V
V
V
uA
V
V
MHz
pF
pF
Continental Device India Limited
Data Sheet
Page 1 of 3
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet CSD655.PDF ] | |
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