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PDF AP04N70BP Data sheet ( Hoja de datos )
| Número de pieza | AP04N70BP | |
| Descripción | N-CHANNEL ENHANCEMENT MODE | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP04N70BP
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Dynamic dv/dt Rating
▼ Repetitive Avalanche Rated
D
▼ Fast Switching
▼ Simple Drive Requirement
G
S
Description
AP04N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. TO-220
type provide high blocking voltage to overcome voltage surge and sag in
the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
BVDSS
RDS(ON)
ID
600/650/700V
2.4Ω
4A
G
D
S
TO-220
The TO-220 package is universally preferred for all commercial-
industrial applications. The device is suited for switch mode power
supplies ,DC-AC converters and high current high speed switching
circuits. www.DataSheet4U.com
Absolute Maximum Ratings
Symbol
Parameter
Rating
VDS
VGS
ID@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
- /A/H
600/650/700
± 30
4
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
EAR
TSTG
TJ
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
2.5
15
62.5
0.5
100
4
4
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
2.0
62
Unit
℃/W
℃/W
Data & specifications subject to change without notice
20030332
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1 page  
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AP04N70BP
16
I D =4A
14
12 V DS =320V
V DS =400V
10 V DS =480V
8
6
4
2
0
0 5 10 15 20
Q G , Total Gate Charge (nC)
25
f=1.0MHz
10000
Ciss
100
Coss
Crss
1
1 6 11 16 21 26 31
V DS (V)
www.DataSheet4U.comFig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
10
T j =150 o C
T j = 25 o C
1
0.1
0
0.2 0.4 0.6 0.8
1
V SD (V)
1.2 1.4 1.6
Fig 11. Forward Characteristic of
Reverse Diode
5
4
3
2
1
0
-50 0
50 100 150
T j , Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP04N70BP.PDF ] | |
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